IFS75B12N3E4B31BOSA1 datasheet, PDF

Datasheet> All Categories > Discrete semiconductor> The transistor> IFS75B12N3E4B31BOSA1

IFS75B12N3E4B31BOSA1: DescriptionMOD IGBT LOW PWR ECONO; CategoryDiscrete semiconductor The transistor; File Size518KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IFS75B12N3E4B31BOSA1 Overview

MOD IGBT LOW PWR ECONO

IFS75B12N3E4B31BOSA1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	FLANGE MOUNT, R-XUFM-X34
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	36 weeks
Other features	UL RECOGNIZED
Shell connection	ISOLATED
Collector-emitter maximum voltage	1200 V
Configuration	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR
JESD-30 code	R-XUFM-X34
Number of components	6
Number of terminals	34
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	570 ns
Nominal on time (ton)	185 ns

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TechnischeInformation/TechnicalInformation

IGBT-Module

IGBT-modules

IFS75B12N3E4_B31

VorläufigeDaten/PreliminaryData

CES

1200

150

385

+/-20

min.

= 25°C

= 125°C

= 150°C

CE sat

GEth

Gint

ies

res

CES

GES

= 25°C

= 125°C

= 150°C

= 25°C

= 125°C

= 150°C

= 25°C

= 125°C

= 150°C

= 25°C

= 125°C

= 150°C

d on

5,2

typ.

1,85

2,10

2,15

5,8

0,57

4,30

0,16

0,13

0,15

0,02

0,03

0,035

0,33

0,42

0,44

0,06

0,11

0,13

4,70

7,20

8,00

4,70

7,70

8,40

300

0,195

max.

2,15

µC

Ω

µs

MIPAQ™baseModulmitTrench/FeldstoppIGBT4,EmitterControlled4DiodeundStrommesswiderstand

MIPAQ™basemodulewithtrench/fieldstopIGBT4,emittercontrolled4diodeandcurrentsenseshunt

IGBT,Wechselrichter/IGBT,Inverter

Kollektor-Emitter-Sperrspannung

Collector-emittervoltage

Kollektor-Dauergleichstrom

ContinuousDCcollectorcurrent

PeriodischerKollektor-Spitzenstrom

Repetitivepeakcollectorcurrent

Gesamt-Verlustleistung

Totalpowerdissipation

Gate-Emitter-Spitzenspannung

Gate-emitterpeakvoltage

= 25°C

HöchstzulässigeWerte/MaximumRatedValues

= 95°C, T

= 175°C

= 1 ms

= 25°C, T

= 175°C

C nom

CRM

tot

GES

CharakteristischeWerte/CharacteristicValues

Kollektor-Emitter-Sättigungsspannung

Collector-emittersaturationvoltage

Gate-Schwellenspannung

Gatethresholdvoltage

Gateladung

Gatecharge

InternerGatewiderstand

Internalgateresistor

Eingangskapazität

Inputcapacitance

Rückwirkungskapazität

Reversetransfercapacitance

Kollektor-Emitter-Reststrom

Collector-emittercut-offcurrent

Gate-Emitter-Reststrom

Gate-emitterleakagecurrent

Einschaltverzögerungszeit,induktiveLast

Turn-ondelaytime,inductiveload

Anstiegszeit,induktiveLast

Risetime,inductiveload

Abschaltverzögerungszeit,induktiveLast

Turn-offdelaytime,inductiveload

Fallzeit,induktiveLast

Falltime,inductiveload

EinschaltverlustenergieproPuls

Turn-onenergylossperpulse

AbschaltverlustenergieproPuls

Turn-offenergylossperpulse

Kurzschlußverhalten

SCdata

Wärmewiderstand,ChipbisGehäuse

Thermalresistance,junctiontocase

= 75 A, V

= 15 V

= 75 A, V

= 15 V

= 75 A, V

= 15 V

= 2,40 mA, V

= V

, T

= 25°C

= -15 V ... +15 V

= 25°C

f = 1 MHz, T

= 25°C, V

= 25 V, V

= 0 V

f = 1 MHz, T

= 25°C, V

= 25 V, V

= 0 V

= 1200 V, V

= 0 V, T

= 25°C

= 0 V, V

= 20 V, T

= 25°C

= 75 A, V

= 600 V

= ±15 V

Gon

= 2,2

Ω

= 75 A, V

= 600 V

= ±15 V

Gon

= 2,2

Ω

= 75 A, V

= 600 V

= ±15 V

Goff

= 2,2

Ω

= 75 A, V

= 600 V

= ±15 V

Goff

= 2,2

Ω

6,4

1,0

100

d off

= 75 A, V

= 600 V, L

= 25 nH

= 25°C

= ±15 V, di/dt = 2500 A/µs (T

=150°C) T

= 125°C

Gon

= 2,2

Ω

= 150°C

= 75 A, V

= 600 V, L

= 25 nH

= 25°C

= ±15 V, du/dt = 3100 V/µs (T

=150°C) T

= 125°C

Goff

= 2,2

Ω

= 150°C

≤

15 V, V

= 800 V

CEmax

= V

CES

-L

sCE

·di/dt

proIGBT/perIGBT

≤

10 µs, T

= 150°C

off

thJC

thCH

0,39 K/W

K/W

Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT

Thermalresistance,casetoheatsink

Paste

=1W/(m·K)/λ

grease

=1W/(m·K)

preparedby:CM

approvedby:MS

dateofpublication:2013-03-06

revision:2.0

IFS75B12N3E4B31BOSA1 Related Products

	IFS75B12N3E4B31BOSA1	IFS75B12N3E4_B31
Description	MOD IGBT LOW PWR ECONO	MIPAQ™ base 1200V sixpack IGBT Module with Trench/Fieldstop IGBT4, current sense shunts, emitter controlled 4 diode and NTC.
Is it Rohs certified?	conform to	conform to
Maker	Infineon	Infineon
package instruction	FLANGE MOUNT, R-XUFM-X34	FLANGE MOUNT, R-XUFM-X34
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Other features	UL RECOGNIZED	UL RECOGNIZED
Shell connection	ISOLATED	ISOLATED
Collector-emitter maximum voltage	1200 V	1200 V
Configuration	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR
JESD-30 code	R-XUFM-X34	R-XUFM-X34
Number of components	6	6
Number of terminals	34	34
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
surface mount	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	POWER CONTROL	POWER CONTROL
Transistor component materials	SILICON	SILICON
Nominal off time (toff)	570 ns	570 ns
Nominal on time (ton)	185 ns	185 ns

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