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BSZ110N06NS3GATMA1

Description
MOSFET N-CH 60V 20A TSDSON-8
CategoryDiscrete semiconductor    The transistor   
File Size456KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSZ110N06NS3GATMA1 Overview

MOSFET N-CH 60V 20A TSDSON-8

BSZ110N06NS3GATMA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, S-PDSO-N5
Contacts8
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time16 weeks
Samacsys DescriptionBSZ110N06NS3GATMA1 N-Channel MOSFET, 20 A, 60 V OptiMOS 3, 8-Pin TSDSON Infineon
Avalanche Energy Efficiency Rating (Eas)55 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)11 A
Maximum drain-source on-resistance0.011 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-PDSO-N5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)80 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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Description MOSFET N-CH 60V 20A TSDSON-8 mosfet optimos2 pwr transistor N-CH

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