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BSZ110N06NS3 G

Description
mosfet optimos2 pwr transistor N-CH
Categorysemiconductor    Discrete semiconductor   
File Size456KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BSZ110N06NS3 G Overview

mosfet optimos2 pwr transistor N-CH

BSZ110N06NS3 G Parametric

Parameter NameAttribute value
ManufactureInfine
Product CategoryMOSFET
RoHSYes
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage60 V
Vgs - Gate-Source Breakdown Voltage20 V
Id - Continuous Drain Curre20 A
Rds On - Drain-Source Resistance11 mOhms
ConfiguratiSingle Quad Drain Triple Source
Maximum Operating Temperature+ 150 C
Pd - Power Dissipati2.1 W
Mounting StyleSMD/SMT
Package / CaseTSDSON-8
PackagingReel
Channel ModeEnhanceme
Fall Time6 ns
Minimum Operating Temperature- 55 C
Rise Time77 ns
Factory Pack Quantity5000
Typical Turn-Off Delay Time14 ns
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