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T2
BAT720
Schottky barrier diode
Rev. 4 — 14 November 2012
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package.
3
1.2 Features and benefits
Low forward voltage
Low capacitance
AEC-Q101 qualified
1.3 Applications
Ultra high-speed switching
Line termination
Voltage clamping
Reverse polarity protection
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C unless otherwise specified.
Symbol
V
R
V
F
I
R
[1]
Parameter
reverse voltage
forward voltage
reverse current
Conditions
I
F
= 500 mA
V
R
= 35 V
[1]
[1]
Min
-
-
-
Typ
-
-
-
Max
40
550
100
Unit
V
mV
A
Pulse test: t
p
300
s;
0.02.
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
anode
not connected
cathode
1
2
3
1
3
2
n.c.
006aaa436
Simplified outline
Graphic symbol
NXP Semiconductors
BAT720
Schottky barrier diode
3. Ordering information
Table 3.
Ordering information
Package
Name
BAT720
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
BAT720
[1]
* = placeholder for manufacturing site code.
Marking codes
Marking code
[1]
L6*
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
FSM
P
tot
T
j
T
amb
T
stg
[1]
[2]
Parameter
reverse voltage
forward current
non-repetitive peak
forward current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
-
Max
40
500
2
200
125
+125
+150
Unit
V
mA
A
mW
C
C
C
square wave;
t
p
< 10 ms
T
amb
25
C
[1]
-
-
-
55
65
[2]
T
j
= 25
C
before surge.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
Min
-
Typ
-
Max
500
Unit
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BAT720
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 4 — 14 November 2012
2 of 10
NXP Semiconductors
BAT720
Schottky barrier diode
7. Characteristics
Table 7.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol
V
F
I
R
C
d
[1]
Parameter
forward voltage
reverse current
diode capacitance
Conditions
I
F
= 500 mA
V
R
= 35 V
V
R
= 35 V; T
j
= 100
C
f = 1 MHz; V
R
= 0 V
[1]
[1]
[1]
Min
-
-
-
60
Typ
-
-
-
-
Max
550
100
10
90
Unit
mV
A
mA
pF
Pulse test: t
p
300
s;
0.02.
10
3
I
F
(mA)
10
2 (1)
(2)
mbk578
10
(1)
006aac893
I
R
(mA)
1
(2)
10
(3)
10
-1
1
10
-2
(3)
10
−1
150
250
350
450
V
F
(mV)
550
10
-3
0
10
20
30
V
R
(V)
40
(1) T
amb
= 125
C
(2) T
amb
= 85
C
(3) T
amb
= 25
C
(1) T
amb
= 125
C
(2) T
amb
= 85
C
(3) T
amb
= 25
C
Fig 1.
Forward current as a function of forward
voltage; typical values
Fig 2.
Reverse current as a function of reverse
voltage; typical values
BAT720
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 4 — 14 November 2012
3 of 10
NXP Semiconductors
BAT720
Schottky barrier diode
10
2
mbk577
C
d
(pF)
10
1
0
10
20
30
V
R
(V)
40
f = 1 MHz; T
amb
= 25
C
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors,
and is
suitable for use in automotive applications.
BAT720
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 4 — 14 November 2012
4 of 10
Mobile and portable
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