Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
SO
T2
BAT720
Schottky barrier diode
Rev. 4 — 14 November 2012
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package.
3
1.2 Features and benefits
Low forward voltage
Low capacitance
AEC-Q101 qualified
1.3 Applications
Ultra high-speed switching
Line termination
Voltage clamping
Reverse polarity protection
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C unless otherwise specified.
Symbol
V
R
V
F
I
R
[1]
Parameter
reverse voltage
forward voltage
reverse current
Conditions
I
F
= 500 mA
V
R
= 35 V
[1]
[1]
Min
-
-
-
Typ
-
-
-
Max
40
550
100
Unit
V
mV
A
Pulse test: t
p
300
s;
0.02.
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
anode
not connected
cathode
1
2
3
1
3
2
n.c.
006aaa436
Simplified outline
Graphic symbol
NXP Semiconductors
BAT720
Schottky barrier diode
3. Ordering information
Table 3.
Ordering information
Package
Name
BAT720
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
BAT720
[1]
* = placeholder for manufacturing site code.
Marking codes
Marking code
[1]
L6*
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
FSM
P
tot
T
j
T
amb
T
stg
[1]
[2]
Parameter
reverse voltage
forward current
non-repetitive peak
forward current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
-
Max
40
500
2
200
125
+125
+150
Unit
V
mA
A
mW
C
C
C
square wave;
t
p
< 10 ms
T
amb
25
C
[1]
-
-
-
55
65
[2]
T
j
= 25
C
before surge.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
Min
-
Typ
-
Max
500
Unit
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BAT720
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 4 — 14 November 2012
2 of 10
NXP Semiconductors
BAT720
Schottky barrier diode
7. Characteristics
Table 7.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol
V
F
I
R
C
d
[1]
Parameter
forward voltage
reverse current
diode capacitance
Conditions
I
F
= 500 mA
V
R
= 35 V
V
R
= 35 V; T
j
= 100
C
f = 1 MHz; V
R
= 0 V
[1]
[1]
[1]
Min
-
-
-
60
Typ
-
-
-
-
Max
550
100
10
90
Unit
mV
A
mA
pF
Pulse test: t
p
300
s;
0.02.
10
3
I
F
(mA)
10
2 (1)
(2)
mbk578
10
(1)
006aac893
I
R
(mA)
1
(2)
10
(3)
10
-1
1
10
-2
(3)
10
−1
150
250
350
450
V
F
(mV)
550
10
-3
0
10
20
30
V
R
(V)
40
(1) T
amb
= 125
C
(2) T
amb
= 85
C
(3) T
amb
= 25
C
(1) T
amb
= 125
C
(2) T
amb
= 85
C
(3) T
amb
= 25
C
Fig 1.
Forward current as a function of forward
voltage; typical values
Fig 2.
Reverse current as a function of reverse
voltage; typical values
BAT720
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 4 — 14 November 2012
3 of 10
NXP Semiconductors
BAT720
Schottky barrier diode
10
2
mbk577
C
d
(pF)
10
1
0
10
20
30
V
R
(V)
40
f = 1 MHz; T
amb
= 25
C
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors,
and is
suitable for use in automotive applications.
BAT720
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 4 — 14 November 2012
4 of 10
京公网安备 11010802033920号
EEWORLD
