LT1007/LT1037
Low Noise, High Speed
Precision Operational Amplifiers
FEATURES
s
s
s
s
s
s
s
s
s
DESCRIPTIO
Guaranteed
4.5nV/√Hz 10Hz Noise
Guaranteed
3.8nV/√Hz 1kHz Noise
0.1Hz to 10Hz Noise, 60nV
P-P
Typical
Guaranteed
7 Million Min Voltage Gain, R
L
= 2k
Guaranteed
3 Million Min Voltage Gain, R
L
= 600Ω
Guaranteed
25µV Max Offset Voltage
Guaranteed
0.6µV/°C Max Drift with Temperature
Guaranteed
11V/µs Min Slew Rate (LT1037)
Guaranteed
117dB Min CMRR
APPLICATIO S
s
s
s
s
s
s
s
Low Noise Signal Processing
Microvolt Accuracy Threshold Detection
Strain Gauge Amplifiers
Direct Coupled Audio Gain Stages
Sine Wave Generators
Tape Head Preamplifiers
Microphone Preamplifiers
, LTC and LT are registered trademarks of Linear Technology Corporation.
The LT
®
1007/LT1037 series features the lowest noise
performance available to date for monolithic operational
amplifiers: 2.5nV/√Hz wideband noise (less than the noise of
a 400Ω resistor), 1/f corner frequency of 2Hz and 60nV peak-
to-peak 0.1Hz to 10Hz noise. Low noise is combined with
outstanding precision and speed specifications: 10µV offset
voltage, 0.2µV/°C drift, 130dB common mode and power
supply rejection, and 60MHz gain bandwidth product on the
decompensated LT1037, which is stable for closed-loop
gains of 5 or greater.
The voltage gain of the LT1007/LT1037 is an extremely high
20 million driving a 2kΩ load and 12 million driving a 600Ω
load to
±10V.
In the design, processing and testing of the device, particular
attention has been paid to the optimization of the entire
distribution of several key parameters. Consequently, the
specifications of even the lowest cost grades (the LT1007C
and the LT1037C) have been spectacularly improved com-
pared to equivalent grades of competing amplifiers.
The sine wave generator application shown below utilizes the
low noise and low distortion characteristics of the LT1037.
TYPICAL APPLICATIO
430Ω
Ultrapure 1kHz Sine Wave Generator
LT1037
6
OUTPUT
C
1
2πRC
R = 1591.5Ω
±0.1%
C = 0.1µF
±0.1%
f=
#327 LAMP
C
R
TOTAL HARMONIC DISTORTION = < 0.0025%
NOISE = < 0.0001%
AMPLITUDE =
±8V
OUTPUT FREQUENCY = 1.000kHz FOR VALUES GIVEN
±0.4%
1007/37 TA01
+
3
R
VOLTAGE NOISE (20nV/DIV)
–
2
0
U
0.1Hz to 10Hz Noise
2
4
6
TIME (SEC)
8
10
1007/37 TA02
U
U
sn100737 100737fbs
1
LT1007/LT1037
ABSOLUTE
MAXIMUM
RATINGS
Supply Voltage ......................................................
±22V
Input Voltage ............................ Equal to Supply Voltage
Output Short-Circuit Duration .......................... Indefinite
Differential Input Current (Note 9) .....................
±
25mA
Storage Temperature Range ................. – 65°C to 150°C
PACKAGE/ORDER INFORMATION
TOP VIEW
V
OS
TRIM 1
–IN 2
+IN 3
V
–
V
OS
8 TRIM
V
OS
TRIM 1
–IN 2
+IN 3
7
6
5
4
NC
5 NC
4
V
–
4
N8 PACKAGE
8-LEAD PDIP
T
JMAX
= 100°C,
θ
JA
= 130°C/ W (N8)
V
–
(CASE)
H PACKAGE
8-LEAD TO-5 METAL CAN
T
JMAX
= 150°C,
θ
JA
= 150°C/ W,
θ
JC
= 45°C/ W
S8 PACKAGE
8-LEAD PLASTIC SO
T
JMAX
= 150°C,
θ
JA
= 190°C/ W
ORDER PART NUMBER
LT1007ACN8
LT1007CN8
LT1007IN8
LT1037ACN8
LT1037CN8
LT1037IN8
ORDER PART NUMBER
ORDER PART NUMBER
LT1007CS8
LT1007IS8
LT1037CS8
LT1037IS8
J8 PACKAGE
LEAD CERDIP
T
JMAX
= 150°C,
θ
JA
= 100°C/ W (J8)
S8 PART MARKING
LT1007ACH
LT1007AMH
LT1007CH
LT1007MH
LT1037ACH
LT1037AMH
LT1037CH
LT1037MH
1007
1007I
1037
1037I
LT1007ACJ8
LT1007AMJ8
LT1007CJ8
LT1007MJ8
LT1037ACJ8
LT1037AMJ8
LT1037CJ8
LT1037MJ8
OBSOLETE PACKAGE
Consider the N8 Package for Alternate Source
OBSOLETE PACKAGE
Consider the N8 or S8 Package for Alternate Source
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
SYMBOL
V
OS
∆V
OS
∆Time
I
OS
I
B
e
n
PARAMETER
Input Offset Voltage
Long Term Input Offset
Voltage Stability
Input Offset Current
Input Bias Current
Input Noise Voltage
Input Noise Voltage Density
i
n
Input Noise Current Density
CONDITIONS
(Note 2)
(Notes 3, 4)
V
S
=
±15V,
T
A
= 25°C, unless otherwise noted.
LT1007AC/AM
LT1037AC/AM
MIN
TYP
MAX
10
0.2
7
±10
25
1.0
30
±35
0.13
4.5
3.8
4.0
0.6
LT1007C/I/M
LT1037C/I/M
MIN
TYP
MAX
20
0.2
12
±15
0.06
2.8
2.5
1.5
0.4
60
1.0
50
±55
0.13
4.5
3.8
4.0
0.6
0.1Hz to 10Hz (Notes 4, 6)
f
O
= 10Hz (Notes 4, 5)
f
O
= 1000Hz (Note 4)
f
O
= 10Hz (Notes 4, 7)
f
O
= 1000Hz (Notes 4, 7)
0.06
2.8
2.5
1.5
0.4
2
+
OUT
6 OUT
+IN 3
–
–
+
V
+
U
U
W
W W
U
W
(Note 1)
Lead Temperature (Soldering, 10 sec.)................. 300°C
Operating Temperature Range
LT1007/LT1037AC, C ............................. 0°C to 70°C
LT1007/LT1037I ............................... – 40°C to 85°C
LT1007/LT1037AM, M
(OBSOLETE)
– 55°C to 125°C
TOP VIEW
V
OS
TRIM
8
7 V
+
V
OS
1
TRIM
–IN 2
TOP VIEW
8
V
OS
TRIM
–
+
7 V
+
6 OUT
5 NC
UNITS
µV
µV/Mo
nA
nA
µV
P-P
nV/√Hz
nV/√Hz
pA/√Hz
pA/√Hz
sn100737 100737fbs
LT1007/LT1037
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
Input Resistance, Common Mode
Input Voltage Range
CMRR
PSRR
A
VOL
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Large-Signal Voltage Gain
V
CM
=
±11V
CONDITIONS
V
S
=
±15V,
T
A
= 25°C, unless otherwise noted.
LT1007AC/AM
LT1037AC/AM
MIN
TYP
MAX
7
±11.0
117
110
7.0
5.0
3.0
±13.0
±11.0
1.7
11
5.0
45
±12.5
130
130
20.0
16.0
12.0
±13.8
±12.5
2.5
15
8.0
60
70
80
80
120
130
±11.0
110
106
5.0
3.5
2.0
±12.5
±10.5
1.7
11
5.0
45
LT1007C/I/M
LT1037C/I/M
MIN
TYP
MAX
5
±12.5
126
126
20.0
16.0
12.0
±13.5
±12.5
2.5
15
8.0
60
70
80
85
140
140
UNITS
GΩ
V
dB
dB
V/µV
V/µV
V/µV
V
V
V/µs
V/µs
MHz
MHz
Ω
mW
mW
V
S
=
±4V
to
±18V
R
L
≥
2k, V
O
=
±12V
R
L
≥
1k, V
O
=
±10V
R
L
≥
600Ω, V
O
=
±10V
R
L
≥
2k
R
L
≥
600Ω
R
L
≥
2k
A
VCL
≥
5
f
O
= 100kHz (Note 8)
f
O
= 10kHz (Note 8) (A
VCL
≥
5)
V
O
= 0V, I
O
= 0
V
OUT
SR
GBW
Z
O
P
D
Maximum Output Voltage Swing
Slew Rate
Gain Bandwidth
Product
Power Dissipation
LT1007
LT1037
LT1007
LT1037
LT1007
LT1037
Open-Loop Output Resistance
The
q
denotes the specifications which apply over the temperature range 0°C
≤
T
A
≤
70°C, V
S
=
±15V,
unless otherwise noted.
LT1007AC
LT1037AC
MIN
TYP
MAX
q
q
q
q
q
SYMBOL
V
OS
∆V
OS
∆Temp
I
OS
I
B
CMRR
PSRR
A
VOL
V
OUT
P
D
PARAMETER
Input Offset Voltage
Average Input Offset Drift
Input Offset Current
Input Bias Current
Input Voltage Range
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Large-Signal Voltage Gain
Maximum Output Voltage Swing
Power Dissipation
CONDITIONS
(Note 2)
(Note 10)
LT1007C
LT1037C
MIN
TYP
MAX
35
0.3
15
±20
±10.5
106
102
2.5
2.0
±12.0
±11.8
120
120
18.0
14.0
±13.6
90
160
110
1.0
70
±75
UNITS
µV
µV/°C
nA
nA
V
dB
dB
V/µV
V/µV
V
mW
20
0.2
10
±14
±10.5
114
106
4.0
2.5
±12.5
±11.8
126
126
18.0
14.0
±13.6
90
50
0.6
40
±45
V
CM
=
±10.5V
V
S
=
±4.5V
to
±18V
R
L
≥
2k, V
O
=
±10V
R
L
≥
1k, V
O
=
±10V
R
L
≥
2k
q
q
q
q
q
q
144
sn100737 100737fbs
3
LT1007/LT1037
ELECTRICAL CHARACTERISTICS
The
q
denotes the specifications which apply over the temperature range – 40°C
≤
T
A
≤
85°C, V
S
=
±15V,
unless otherwise noted.
SYMBOL
V
OS
∆V
OS
∆Temp
I
OS
I
B
CMRR
PSRR
A
VOL
V
OUT
P
D
PARAMETER
Input Offset Voltage
Average Input Offset Drift
Input Offset Current
Input Bias Current
Input Voltage Range
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Large-Signal Voltage Gain
Maximum Output Voltage Swing
Power Dissipation
V
CM
=
±10.5V
V
S
=
±4.5V
to
±18V
R
L
≥
2k, V
O
=
±10V
R
L
≥
1k, V
O
=
±10V
R
L
≥
2k
CONDITIONS
(Note 2)
(Note 10)
q
q
q
q
q
q
q
q
q
q
q
LT1007I/LT1037I
MIN
TYP
MAX
40
0.3
20
±25
±10
105
101
2.0
1.5
±12.0
±11.7
120
120
15.0
12.0
±13.6
95
165
125
1.0
80
±90
UNITS
µV
µV/°C
nA
nA
V
dB
dB
V/µV
V/µV
V
mW
The
q
denotes the specifications which apply over the temperature range – 55°C
≤
T
A
≤
125°C, V
S
=
±15V,
unless otherwise noted.
SYMBOL
V
OS
∆V
OS
∆Temp
I
OS
I
B
CMRR
PSRR
A
VOL
V
OUT
P
D
PARAMETER
Input Offset Voltage
Average Input Offset Drift
Input Offset Current
Input Bias Current
Input Voltage Range
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Large-Signal Voltage Gain
Maximum Output Voltage Swing
Power Dissipation
V
CM
=
±10.3V
V
S
=
±4.5V
to
±18V
R
L
≥
2k, V
O
=
±10V
R
L
≥
1k, V
O
=
±10V
R
L
≥
2k
CONDITIONS
(Note 2)
(Note 10)
q
q
q
q
q
q
q
q
q
q
q
LT1007AM/LT1037AM
MIN
TYP
MAX
25
0.2
15
±20
±10.3
112
104
3.0
2.0
±12.5
±11.5
126
126
14.0
10.0
±
13.5
100
150
60
0.6
50
±60
LT1007M/LT1037M
MIN
TYP
MAX
50
0.3
20
±35
±10.3
104
100
2.0
1.5
±12.0
±11.5
120
120
14.0
10.0
±13.5
100
170
160
1.0
85
±95
UNITS
µV
µV/°C
nA
nA
V
dB
dB
V/µV
V/µV
V
mW
For MIL-STD components, please refer to LTC 883C data sheet for test
listing and parameters.
Note 1:
Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2:
Input Offset Voltage measurements are performed by automatic
test equipment approximately 0.5 seconds after application of power. AM
and AC grades are guaranteed fully warmed up.
Note 3:
Long Term Input Offset Voltage Stability refers to the average
trend line of Offset Voltage vs Time over extended periods after the first 30
days of operation. Excluding the initial hour of operation, changes in V
OS
during the first 30 days are typically 2.5µV. Refer to typical performance
curve.
Note 4:
This parameter is tested on a sample basis only.
Note 5:
10Hz noise voltage density is sample tested on every lot. Devices
100% tested at 10Hz are available on request.
Note 6:
See the test circuit and frequency response curve for 0.1Hz to
10Hz tester in the Applications Information section.
Note 7:
See the test circuit for current noise measurement in the
Applications Information section.
Note 8:
This parameter is guaranteed by design and is not tested.
Note 9:
The inputs are protected by back-to-back diodes. Current limiting
resistors are not used in order to achieve low noise. If differential input
voltage exceeds
±0.7V,
the input current should be limited to 25mA.
Note 10:
The Average Input Offset Drift performance is within the
specifications unnulled or when nulled with a pot having a range of 8kΩ to
20kΩ.
sn100737 100737fbs
4
LT1007/LT1037
TYPICAL PERFORMANCE CHARACTERISTICS
10Hz Voltage Noise Distribution
140
120
NUMBER OF UNITS
100
80
60
40
20
0
0
1
7 8 9
4 5 6
2 3
VOLTAGE NOISE DENSITY (nV/
√
Hz)
10
100
RMS VOLTAGE NOISE DENSITY (nV/√Hz)
V
S
=
±15V
T
A
= 25°C
497 UNITS MEASURED
FROM SIX RUNS
0.01Hz to 1Hz Peak-to-Peak Noise
1000
R
SOURCE RESISTANCE = 2R
RMS VOLTAGE NOISE DENSITY (nV/√Hz)
TOTAL NOISE DENSITY (nV/√Hz)
VOLTAGE NOISE (20nV/DIV)
0
20
40
60
TIME (SEC)
Current Noise vs Frequency
10
10
RMS VOLTAGE NOISE DENSITY (nV/√Hz)
RMS NOISE DENSITY (pA/√Hz)
3
MAXIMUM
1
RMS VOLTAGE NOISE (µV)
0.3
1/f CORNER = 120Hz
TYPICAL
0.1
10
100
1k
FREQUENCY (Hz)
10k
1007/37 G07
U W
1007/37 G01
Voltage Noise vs Frequency
V
S
=
±15V
T
A
= 25°C
30
0.02Hz to 10Hz RMS Noise. Gain = 50,000
(Measured on HP3582 Spectrum Analyzer)
10
MAXIMUM
3
1/f CORNER = 2Hz
1
0.1
1
TYPICAL
10
100
FREQUENCY (Hz)
1000
1007/37 G02
MARKER AT 2Hz ( = 1/f CORNER) =
179µV/√Hz
nV
= 3.59
50,000
√Hz
1007/37 G03
Total Noise vs Source Resistance
5
R
Voltage Noise vs Temperature
V
S
=
±15V
4
AT 10Hz
3
AT 1kHz
2
V
S
=
±15V
T
A
= 25°C
100
AT 1kHz
AT 10Hz
10
RESISTOR
NOISE ONLY
1
0.1
1
10
SOURCE RESISTANCE (kΩ)
100
1007/37 G05
1
80
100
1007/37 G04
0
–50
–25
50
25
0
75
TEMPERATURE (°C)
100
125
1007/37 G06
Wideband Voltage Noise
(0.1Hz to Frequency Indicated)
5
Voltage Noise vs Supply Voltage
T
A
= 25°C
4
1
3
AT 10Hz
AT 1kHz
2
0.1
1
0.01
0.1
1
10
BANDWIDTH (kHz)
100
1007/37 G08
0
0
5
15
20
10
SUPPLY VOLTAGE (±V)
25
1007/37 G09
sn100737 100737fbs
5
Embedded System
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