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STK10C68-SF35

Description
8K x 8 nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM
Categorystorage    storage   
File Size144KB,12 Pages
ManufacturerSimtek
Websitehttp://www.simtek.com
Environmental Compliance
Download Datasheet Parametric View All

STK10C68-SF35 Overview

8K x 8 nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM

STK10C68-SF35 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSimtek
package instructionSOP,
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time35 ns
JESD-30 codeR-PDSO-G28
JESD-609 codee3
length18.085 mm
memory density65536 bi
Memory IC TypeNON-VOLATILE SRAM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height2.54 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width8.765 mm
STK10C68
STK10C68-M SMD#5962-93056
8K x 8 nvSRAM
QuantumTrap™
CMOS
Nonvolatile Static RAM
Obsolete - Not Recommend for new Designs
FEATURES
• 25ns, 35ns, 45ns and 55ns Access Times
STORE
to Nonvolatile Elements Initiated by
Hardware
RECALL
to SRAM Initiated by Hardware or
Power Restore
• Automatic
STORE
Timing
• 10mA Typical I
CC
at 200ns Cycle Time
• Unlimited READ, WRITE and
RECALL
Cycles
• 1,000,000
STORE
Cycles to Nonvolatile Ele-
ments (Industrial/Commercial)
• 100-Year Data Retention (Industrial/Commer-
cial)
• Commercial, Industrial and Military Tempera-
tures
• 28-Pin DIP, SOIC and LCC Packages
DESCRIPTION
The Simtek STK10C68 is a fast static
RAM
with a nonvol-
atile element incorporated in each static memory cell. The
SRAM
can be read and written an unlimited number of
times, while independent nonvolatile data resides in
Non-
volatile Elements
. Data may easily be transferred from
the
SRAM
to the
Nonvolatile Elements
(the
STORE
oper-
ation
), or from the
Nonvolatile Elements
to the
SRAM
(the
RECALL
operation), using the NE pin.
Transfers
from the Nonvolatile Elements to the
SRAM
(the
RECALL
operation) also take place automatically on
restoration of power.
The STK10C68 combines the high
performance and ease of use of a fast
SRAM
with nonvol-
atile data integrity.
The STK10C68 features industry-standard pinout for non-
volatile
RAM
s. MIL-STD-883 and Standard Military Draw-
ing (
SMD
#5962-93056) devices are available.
BLOCK DIAGRAM
QUANTUM TRAP
128 x 512
ROW DECODER
PIN CONFIGURATIONS
NE
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
DQ
0
DQ
1
DQ
2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A
5
A
6
A
7
A
8
A
9
A
11
A
12
DQ
0
DQ
1
DQ
2
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
STORE
STATIC RAM
ARRAY
128 x 512
RECALL
V
CC
W
NC
A
8
A
9
A
11
G
A
10
E
DQ
7
DQ
6
DQ
5
DQ
4
DQ
3
28 - LCC
28 - DIP
28 - SOIC
INPUT BUFFERS
COLUMN I/O
COLUMN DEC
STORE/
RECALL
CONTROL
PIN NAMES
A
0
- A
12
W
Address Inputs
Write Enable
Data In/Out
Chip Enable
Output Enable
Nonvolatile Enable
Power (+ 5V)
Ground
A
0
A
1
A
2
A
3
A
4
A
10
G
NE
E
W
DQ
0
- DQ
7
E
G
NE
V
CC
V
SS
March 2006
1
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