STD70N03L
STD70N03L-1
N-channel 30V - 0.0059Ω - 70A - DPAK / IPAK
STripFET™ III Power MOSFET
General features
Type
STD70N03L
STD70N03L-1
■
■
■
■
V
DSS
30V
30V
R
DS(on)
<0.0073Ω
<0.0073Ω
I
D
70A
70A
3
1
R
DS(ON)
* Qg industry’s benchmark
Conduction losses reduced
Switching losses reduced
Low threshold device
DPAK
Description
This product utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This is suitable for the most demanding DC-DC
converter application where high efficiency is to
be achieved.
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Order codes
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Internal schematic diagram
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2
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3
IPAK
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Switching application
Part number
STD70N03L
Marking
Package
DPAK
IPAK
Packaging
Tape & reel
Tube
D70N03L
STD70N03L-1
D70N03L-1
June 2006
Rev 1
1/16
www.st.com
16
Contents
STD70N03L - STD70N03L-1
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 8
3
4
5
6
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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2/16
STD70N03L - STD70N03L-1
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
GS
I
D
I
D
I
DM (1)
P
TOT
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Gate-source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Value
30
± 20
70
50
280
70
Unit
V
V
A
E
AS (2)
T
j
T
stg
Single pulse avalanche energy
Operating junction temperature
Storage temperature
1. Pulse width limited by safe operating area
2. Starting Tj =25°C, Id = 30A, Vdd = 15V
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Table 2.
Thermal resistance
Symbol
Parameter
Rthj-case
Rthj-amb
T
l
Thermal resistance junction-case Max
Thermal resistance junction-amb Max
Maximum lead temperature for soldering purpose
b
O
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r
P
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0.47
300
uc
s)
t(
A
A
W
P
e
od
r
-55 to 175
s)
t(
uc
W/°C
mJ
°C
Value
2.14
100
275
Unit
°C/W
°C/W
°C
3/16
Electrical characteristics
STD70N03L - STD70N03L-1
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
On/off states
Parameter
Drain-source
breakdown voltage
Test condictions
I
D
= 250µA, V
GS
= 0
Min.
30
1
10
Typ.
Max.
Unit
V
µA
µA
Zero gate voltage drain V
DS
= 20V,
current (V
GS
= 0)
V
DS
= 20V,Tc = 125°C
Gate body leakage
current(V
DS
= 0)
V
GS
= ±20V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 35A
R
DS(on)
Static drain-source on
resistance
V
GS
= 5V, I
D
= 35A
V
GS
= 10V, I
D
= 35A @Tj=125°C
V
GS
= 5V, I
D
= 35A @Tj=125°C
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Symbol
g
fs (1)
C
iss
Parameter
Test condictions
Forward
transconductance
V
DS
=10V, I
D
= 15A
C
oss
C
rss
Q
g
Input capacitance
Output capacitance
Reverse transfer
capacitance
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
Third-quadrant gate
charge
V
DD
=15V, I
D
= 70A
(see Figure 7)
V
GS
=5V
Q
gls (2)
R
G
V
DS
<0V, V
GS
=10V
Gate input resistance
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2.
Table 4.
Dynamic
b
O
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ro
P
Min.
1
P
e
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r
40
0.0059 0.0073
0.007 0.013
0.0091 0.0113
0.0108 0.0201
uc
d
±
100
s)
t(
nA
V
ct
u
s)
(
Ω
Ω
Ω
Ω
Typ.
Max.
Unit
S
pF
pF
pF
V
DS
=25V, f=1MHz, V
GS
=0
2200
380
49
15.7
8.3
3.4
15
1.5
21
nC
nC
nC
nC
Ω
f=1MHz Gate DC Bias =0 Test
signal level =20mV open drain
Gate charge for synchronous operation: see
Appendix A: Power losses estimation
4/16
STD70N03L - STD70N03L-1
Electrical characteristics
Table 5.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test condictions
V
DD
=15V, I
D
=35A,
R
G
=4.7Ω, V
GS
=5V
(see Figure 13)
Min.
Typ.
21
95
19
15
Max.
Unit
ns
ns
ns
ns
Table 6.
Symbol
I
SD
I
SDM(1)
V
SD (2)
t
rr
Q
rr
I
RRM
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=35A, V
GS
=0
I
SD
= 70A,
di/dt=100A/µs,
V
DD
=20V, Tj=150°C
(see
Figure 18)
Test condictions
Min
Typ.
Max
70
1. Pulse width limited by safe operating area
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2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
b
O
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P
d
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280
1.3
s)
t(
Unit
A
A
V
P
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32
51
3.2
s)
t(
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ns
nC
A
5/16
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