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BPW34B

Description
PHOTODIODE 850NM THRU-HOLE 620MA
CategoryLED optoelectronic/LED    photoelectric   
File Size134KB,7 Pages
ManufacturerOsram Opto Semiconductor
Websitehttps://www.osram.com/index-2.jsp
Environmental Compliance
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BPW34B Overview

PHOTODIODE 850NM THRU-HOLE 620MA

BPW34B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerOsram Opto Semiconductor
package instructionROHS COMPLIANT, PLASTIC, DIL-2
Reach Compliance Codecompliant
ConfigurationSINGLE
Maximum dark power30 nA
Infrared rangeYES
JESD-609 codee2
Nominal photocurrent0.0054 mA
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Optoelectronic device typesPIN PHOTODIODE
peak wavelength850 nm
Maximum response time3.5e-7 s
Minimum reverse breakdown voltage32 V
Maximum reverse voltage32 V
Semiconductor materialSilicon
shapeSQUARE
size2.73 mm
surface mountNO
Terminal surfaceTin/Nickel (Sn/Ni)
Base Number Matches1
Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit; in SMT
Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT
Lead (Pb) Free Product - RoHS Compliant
BPW 34 B
BPW 34 BS
BPW 34 B
BPW 34 BS
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 350 nm bis 1100 nm
• Kurze Schaltzeit (typ. 25 ns)
• DIL-Plastikbauform mit hoher Packungsdichte
Anwendungen
• Lichtschranken für Gleich- und
Wechsellichtbetrieb im sichtbaren Lichtbereich
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
BPW 34 B
BPW 34 BS
Bestellnummer
Ordering Code
Q65110A3126
Q65110A2625
Features
• Especially suitable for applications from
350 nm to 1100 nm
• Short switching time (typ. 25 ns)
• DIL plastic package with high packing density
Applications
• Photointerrupters
• Industrial electronics
• For control and drive circuits
2007-04-03
1

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BPW34B BPW 34 BS-Z
Description PHOTODIODE 850NM THRU-HOLE 620MA PHOTODIODE 850NM SMD
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