Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit; in SMT
Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT
Lead (Pb) Free Product - RoHS Compliant
BPW 34 B
BPW 34 BS
BPW 34 B
BPW 34 BS
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 350 nm bis 1100 nm
• Kurze Schaltzeit (typ. 25 ns)
• DIL-Plastikbauform mit hoher Packungsdichte
Anwendungen
• Lichtschranken für Gleich- und
Wechsellichtbetrieb im sichtbaren Lichtbereich
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
BPW 34 B
BPW 34 BS
Bestellnummer
Ordering Code
Q65110A3126
Q65110A2625
Features
• Especially suitable for applications from
350 nm to 1100 nm
• Short switching time (typ. 25 ns)
• DIL plastic package with high packing density
Applications
• Photointerrupters
• Industrial electronics
• For control and drive circuits
2007-04-03
1
BPW 34 B, BPW 34 BS
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Verlustleistung,
T
A
= 25
°C
Total power dissipation
Symbol
Symbol
Wert
Value
– 40 … + 85
32
150
Einheit
Unit
°C
V
mW
T
op
;
T
stg
V
R
P
tot
Kennwerte
(
T
A
= 25
°C,
Normlicht A,
T
= 2856 K)
Characteristics
(
T
A
= 25
°C,
standard light A,
T
= 2856 K)
Bezeichnung
Parameter
Fotoempfindlichkeit,
V
R
= 5 V
Spectral sensitivity
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
= 10% von
S
max
Spectral range of sensitivity
S
= 10% of
S
max
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Symbol
Symbol
Wert
Value
75
850
350 … 1100
Einheit
Unit
nA/Ix
nm
nm
S
λ
S max
λ
A
7.45
2.73
×
2.73
±
60
2 (≤ 30)
0.2
0.62
390
mm
2
mm
×
mm
Grad
deg.
nA
A/W
Electrons
Photon
mV
Abmessung der bestrahlungsempfindlichen Fläche
L
×
B
Dimensions of radiant sensitive area
L
×
W
Halbwinkel
Half angle
Dunkelstrom,
V
R
= 10 V
Dark current
Spektrale Fotoempfindlichkeit,
λ
= 400 nm
Spectral sensitivity
Quantenausbeute,
λ
= 400 nm
Quantum yield
Leerlaufspannung,
E
v
= 1000 Ix
Open-circuit voltage
ϕ
I
R
S
λ
η
V
O
2007-04-03
2
BPW 34 B, BPW 34 BS
Kennwerte
(
T
A
= 25
°C,
Normlicht A,
T
= 2856 K)
Characteristics
(
T
A
= 25
°C,
standard light A,
T
= 2856 K) (cont’d)
Bezeichnung
Parameter
Kurzschlussstrom
Short-circuit current
E
e
= 0.5 mW/cm
2
,
λ
= 400 nm
Anstiegs- und Abfallzeit des Fotostroms
Rise and fall time of the photocurrent
R
L
= 50
Ω;
V
R
= 5 V;
λ
= 850 nm;
I
p
= 800
μA
Durchlassspannung,
I
F
= 100 mA,
E
= 0
Forward voltage
Kapazität,
V
R
= 0 V,
f
= 1 MHz,
E
= 0
Capacitance
Temperaturkoeffizient von
V
O
Temperature coefficient of
V
O
Temperaturkoeffizient von
I
SC
Temperature coefficient of
I
SC
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
R
= 10 V,
λ
= 400 nm
Nachweisgrenze,
V
R
= 10 V,
λ
= 400 nm
Detection limit
Symbol
Symbol
Wert
Value
7.4 (≥ 5.4)
Einheit
Unit
μA
I
SC
t
r,
t
f
25
ns
V
F
C
0
TC
V
TC
I
NEP
1.3
72
– 2.6
0.18
1.3
×
10
– 13
V
pF
mV/K
%/K
W
-----------
-
Hz
cm
×
Hz
-------------------------
-
W
D*
2.1
×
10
12
2007-04-03
3
BPW 34 B, BPW 34 B
Relative Spectral Sensitivity
S
rel
=
f
(λ)
100
S
rel
%
80
OHF01001
Photocurrent
I
P
=
f
(
E
v
),
V
R
= 5 V
Open-Circuit Voltage
V
O
=
f
(
E
v
)
Ι
P
10
3
μ
A
OHF01066
Total Power Dissipation
P
tot
=
f
(
T
A
)
160
mW
P
tot
140
120
100
OHF00958
10
4
mV
V
O
10
3
10
2
V
O
60
10
1
Ι
P
10
2
80
60
40
10
0
10
1
40
20
20
0
400
600
800
1000 nm 1200
λ
10
-1
10
0
10
0
10
1
10
2
10
3
lx 10
4
E
V
0
0
20
40
60
80 ˚C 100
T
A
Dark Current
I
R
=
f
(
V
R
),
E
= 0
4000
OHF00080
Capacitance
C
=
f
(
V
R
),
f
= 1 MHz,
E
= 0
100
C
pF
80
OHF00081
Dark Current
I
R
=
f
(
T
A
),
V
R
= 5 V,
E
= 0
10
3
OHF00082
Ι
R
pA
Ι
R
nA
10
2
3000
70
60
2000
50
40
30
10
1
1000
10
0
20
10
0
0
5
10
15
V
V
R
20
0
-2
10
10
-1
10
0
10
1
V 10
2
V
R
10
-1
0
20
40
60
80 ˚C 100
T
A
Directional Characteristics
S
rel
=
f
(ϕ)
40
30
20
10
ϕ
0
1.0
OHF01402
50
0.8
60
0.6
70
0.4
80
0.2
0
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
2007-04-03
4
BPW 34 B, BPW 34 BS
Maßzeichnung
Package Outlines
BPW 34 B
5.4 (0.213)
Cathode marking
4.0 (0.157)
3.7 (0.146)
0.6 (0.024)
0.4 (0.016)
1.2 (0.047)
0.7 (0.028)
4.9 (0.193)
4.5 (0.177)
0.8 (0.031)
0.6 (0.024)
0.6 (0.024)
0.4 (0.016)
2.2 (0.087)
1.9 (0.075)
4.3 (0.169)
Chip position
0.6 (0.024)
1.8 (0.071)
1.4 (0.055)
0.6 (0.024)
0.4 (0.016)
0.4 (0.016)
0.35 (0.014)
0.5 (0.020)
0.2 (0.008)
0.3 (0.012)
0.8 (0.031)
0.6 (0.024)
0 ... 5˚
Photosensitive area
2.65 (0.104) x 2.65 (0.104)
5.08 (0.200)
spacing
GEOY6643
BPW 34 BS
Chip position
1.2 (0.047)
1.1 (0.043)
0...0.1
(0...0.004)
0.3 (0.012)
1.1 (0.043)
0.9 (0.035)
˚
0.2 (0.008)
0.1 (0.004)
GEOY6863
6.7 (0.264)
6.2 (0.244)
4.5 (0.177)
4.3 (0.169)
0.9 (0.035)
0.7 (0.028)
1.8 (0.071)
±0.2 (0.008)
1.7 (0.067)
1.5 (0.059)
4.0 (0.157)
3.7 (0.146)
5
Photosensitive area
Cathode lead
2.65 (0.104) x 2.65 (0.104)
Maße in mm (inch) / Dimensions in mm (inch).
2007-04-03
0...5
3.5 (0.138)
3.0 (0.118)
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