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2SK066500L

Description
MOSFET N-CH 20V 100MA SMINI-3
Categorysemiconductor    Discrete semiconductor   
File Size238KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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2SK066500L Overview

MOSFET N-CH 20V 100MA SMINI-3

2SK066500L Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)20V
Current - Continuous Drain (Id) at 25°C100mA(Ta)
Drive voltage (maximum Rds On, minimum Rds On)5V
Rds On (maximum value) when different Id, Vgs50 ohms @ 20mA, 5V
Vgs (th) (maximum value) when different Id3.5V @ 100µA
Vgs (maximum value)8V
FET function-
Power dissipation (maximum)150mW(Ta)
Operating temperature150°C(TJ)
Installation typesurface mount
Supplier device packagingS mini 3-G1
Package/casingSC-70,SOT-323
This product complies with the RoHS Directive (EU 2002/95/EC).
Silicon MOSFETs (Small Signal)
2SK0665
(2SK665)
Silicon N-channel MOSFET
Unit: mm
(0.425)
For switching circuits
Features
High-speed switching
Small drive current owing to high input inpedance
High electrostatic breakdown voltage
0.3
+0.1
–0.0
3
0.15
+0.10
–0.05
1.25
±0.10
2.1
±0.1
M
Di ain
sc te
on na
tin nc
ue e/
d
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
DS
I
D
Drain-source voltage
Rating
20
8
Unit
V
V
10˚
Gate-source voltage (Drain open)
Drain current
V
GSO
I
DP
P
D
Peak drain current
Power dissipation
Channel temperature
Storage temperature
Electrical Characteristics
T
a
=
25°C
±
2°C
Parameter
Symbol
V
DSS
I
DSS
V
th
I
GSS
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Output voltage high-level
Output voltage low-level
Input resistance
*1
Turn-on time
*2, 3
Turn-off time
*2, 3
Pl
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
ea
s
ht e v
tp is
:// it
pa fo
na llo
so win
ni g
c. U
co R
.jp L a
/s bo
em u
ic t la
on te
/e st
-in in
de for
x. ma
ht t
m ion
l
.
0 to 0.1
100
200
150
150
mA
mA
°C
0.9
±0.1
0.9
+0.2
–0.1
mW
°C
EIAJ: SC-70
1: Gate
2: Source
3: Drain
SMini3-G1 Package
T
ch
T
stg
−55
to
+150
Marking Symbol: 3O
Internal Connection
R
1
D
G
R
2
S
Conditions
Min
20
Typ
Max
Unit
V
µA
V
I
D
=
100
µA,
V
GS
=
0
V
DS
=
10 V, V
GS
=
0
V
GS
=
8 V, V
DS
=
0
10
40
80
µA
I
D
=
100
µA,
V
DS
=
V
GS
I
D
=
20 mA, V
GS
=
5 V
1.5
20
3.5
Y
fs
V
OH
V
OL
I
D
=
20 mA, V
DS
=
5 V, f
=
1 kHz
mS
V
V
kΩ
µs
µs
R
DS(on)
50
V
DD
=
5 V, V
GS
=
1 V, R
L
=
200
V
DD
=
5 V, V
GS
=
5 V, R
L
=
200
4.5
1.0
100
200
1.0
1.0
R
1
+R
2
t
on
t
off
V
DD
=
5 V, V
GS
=
0 V to 5 V, R
L
=
200
V
DD
=
5 V, V
GS
=
5 V to 0 V, R
L
=
200
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2006
SJF00026CED
0.2
±0.1
1

2SK066500L Related Products

2SK066500L 2SK0665G0L
Description MOSFET N-CH 20V 100MA SMINI-3 MOSFET N-CH 20V .1A SMINI-3
FET type N channel N channel
technology MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) at 25°C 100mA(Ta) 100mA(Ta)
Drive voltage (maximum Rds On, minimum Rds On) 5V 5V
Rds On (maximum value) when different Id, Vgs 50 ohms @ 20mA, 5V 50 ohms @ 20mA, 5V
Vgs (th) (maximum value) when different Id 3.5V @ 100µA 3.5V @ 100µA
Vgs (maximum value) 8V 8V
Power dissipation (maximum) 150mW(Ta) 150mW(Ta)
Operating temperature 150°C(TJ) 150°C(TJ)
Installation type surface mount surface mount
Supplier device packaging S mini 3-G1 S mini 3-F2
Package/casing SC-70,SOT-323 SC-85
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