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MA2J70400L

Description
DIODE SCHOTTKY 20V 200MA SMINI2
Categorysemiconductor    Discrete semiconductor   
File Size228KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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MA2J70400L Overview

DIODE SCHOTTKY 20V 200MA SMINI2

MA2J70400L Parametric

Parameter NameAttribute value
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)20V
Current - average rectification (Io)200mA
Voltage at different If - Forward (Vf550mV @ 200mA
speedSmall signal =< 200mA (Io), any speed
Reverse recovery time (trr)3ns
Current at different Vr - Reverse leakage current5µA @ 20V
Capacitance at different Vr, F30pF @ 0V,1MHz
Installation typesurface mount
Package/casingSC-90,SOD-323F
Supplier device packagingS mini type 2-F1
Operating Temperature - Junction125°C (maximum)
This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2J704
(MA10704)
Silicon epitaxial planar type
Unit: mm
For super high speed switching
Features
Forward current (Average) I
F(AV)
=
200 mA rectification is possible
Small reverse current I
R
(About 1/10 of I
R
of the ordinary
products)
1.25
±0.1
0.35
±0.1
0.7
±0.1
1
0 to 0.1
1.7
±0.1
2.5
±0.2
M
ain
Di
sc te
on na
tin nc
ue e/
d
2
0.5
±0.1
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
R
Reverse voltage
Repetitive peak reverse voltage
Peak forward current
V
RRM
I
FM
I
F(AV)
I
FSM
T
j
Forward current (Average)
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
T
stg
−55
to
+125
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
F
Forward voltage
Reverse current
tin
I
R1
C
t
t
rr
I
R2
Terminal capacitance
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1 GHz.
4. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
Ma
int
en
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
an
ce
Reverse recovery time
*
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Wave Form Analyzer
(SAS-8130)
R
i
=
50
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.
0 to 0.1
0.16
+0.1
–0.06
Rating
20
20
Unit
V
V
300
200
1
mA
mA
A
1 : Anode
2 : Cathode
EIAJ : SC-76
SMini2-F1 Package
Marking Symbol: 2S
125
°C
°C
Conditions
Min
Typ
Max
0.55
2
5
ue
I
F
=
200 mA
V
R
=
10 V
V
R
=
20 V
(0.15)
0.4
±0.1
Unit
V
µA
pF
ns
isc
on
/D
V
R
=
0 V, f
=
1 MHz
30
I
F
=
I
R
=
100 mA
I
rr
=
0.1 I
R
, R
L
=
100
3.0
Input Pulse
t
p
10%
Output Pulse
t
r
t
I
F
t
rr
t
I
rr
=
0.1 I
R
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SKH00013BED
1

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