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BD242CTU

Description
TRANS PNP 100V 3A TO-220
Categorysemiconductor    Discrete semiconductor   
File Size27KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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BD242CTU Overview

TRANS PNP 100V 3A TO-220

BD242CTU Parametric

Parameter NameAttribute value
Transistor typePNP
Current - Collector (Ic) (Maximum)3A
Voltage - collector-emitter breakdown (maximum)100V
Vce saturation value (maximum value) when different Ib,Ic1.2V @ 600mA,3A
Current - collector cutoff (maximum)300µA
DC current gain (hFE) at different Ic, Vce (minimum value)25 @ 1A,4V
Power - Max40W
Frequency - Transition-
Operating temperature150°C(TJ)
Installation typeThrough hole
Package/casingTO-220-3
Supplier device packagingTO-220
BD242/A/B/C
BD242/A/B/C
Medium Power Linear and Switching
Applications
• Complement to BD241/A/B/C respectively
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CEO
Parameter
Collector-Emitter Voltage
: BD242
: BD242A
: BD242B
: BD242C
Collector-Emitter Voltage
: BD242
: BD242A
: BD242B
: BD242C
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Value
- 45
- 60
- 80
- 100
- 55
- 70
- 90
- 115
-5
-3
-5
-1
40
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
V
CER
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BD242
: BD242A
: BD242B
: BD242C
Collector Cut-off Current
Collector Cut-off Current
: BD242/A
: BD242B/C
: BD242
: BD242A
: BD242B
: BD242C
Test Condition
I
C
= - 30mA, I
B
= 0
Min.
- 45
- 60
- 80
- 100
- 0.3
- 0.3
- 0.2
- 0.2
- 0.2
- 0.2
-1
25
10
- 1.2
- 1.8
V
V
Typ.
Max.
Units
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
I
CEO
I
CES
V
CE
= - 30V, I
B
= 0
V
CE
= - 60V, I
B
= 0
V
CE
= - 45V, V
BE
= 0
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
V
CE
= - 100V, V
BE
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 4V, I
C
= - 1A
V
CE
= - 4V, I
C
= - 3A
I
C
= - 3A, I
B
= - 0.6A
V
CE
= - 4V, I
C
= - 3A
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
* Pulse Test: PW=300µs, duty Cycle≤2% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000

BD242CTU Related Products

BD242CTU BD242ATU BD242TU
Description TRANS PNP 100V 3A TO-220 TRANS PNP 60V 3A TO-220 TRANS PNP 45V 3A TO-220
Transistor type PNP PNP PNP
Current - Collector (Ic) (Maximum) 3A 3A 3A
Voltage - collector-emitter breakdown (maximum) 100V 60V 45V
Vce saturation value (maximum value) when different Ib,Ic 1.2V @ 600mA,3A 1.2V @ 600mA,3A 1.2V @ 600mA,3A
Current - collector cutoff (maximum) 300µA 300µA 300µA
DC current gain (hFE) at different Ic, Vce (minimum value) 25 @ 1A,4V 25 @ 1A,4V 25 @ 1A,4V
Power - Max 40W 40W 40W
Operating temperature 150°C(TJ) 150°C(TJ) 150°C(TJ)
Installation type Through hole Through hole Through hole
Package/casing TO-220-3 TO-220-3 TO-220-3
Supplier device packaging TO-220 TO-220 TO-220

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