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FDP4020P

Description
MOSFET P-CH 20V 16A TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size73KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
Download Datasheet Parametric Compare View All

FDP4020P Overview

MOSFET P-CH 20V 16A TO-220AB

FDP4020P Parametric

Parameter NameAttribute value
FET typeP channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)20V
Current - Continuous Drain (Id) at 25°C16A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)2.5V,4.5V
Rds On (maximum value) when different Id, Vgs80 milliohms @ 8A, 4.5V
Vgs (th) (maximum value) when different Id1V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)13nC @ 4.5V
Vgs (maximum value)±8V
Input capacitance (Ciss) at different Vds (maximum value)665pF @ 10V
FET function-
Power dissipation (maximum)37.5W(Tc)
Operating temperature-65°C ~ 175°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-220AB
Package/casingTO-220-3
FDP4020P
September 2000
FDP4020P/FDB4020P
P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
General Description
This P-Channel low threshold MOSFET has been
designed for use as a linear pass element for low voltage
outputs. In addition, the part may be used as a low voltage
load switch when switching outputs on or off for power
management.The part may also be used in conjunction
with DC-DC converters requiring P-Channel.
Features
• -16 A, -20 V. R
DS(on)
= 0.08
@ V
GS
= -4.5 V
R
DS(on)
= 0.11
@ V
GS
= -2.5 V.
• Critical DC electrical parameters specified at elevated
temperature.
• High density cell design for extremely low R
DS(on)
.
• TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.
• 175°C maximum junction temperature rating.
S
G
D
A bsolute M axim um Ratings
Sym bol
V
DSS
V
G SS
I
D
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
Drain-S ource V oltage
G ate-S ource V oltage
Drain Current
- Continuous
- P ulsed
T
A
= 25°C unless otherw ise noted
Param eter
FD P4020P
-20
±
8
-16
-48
37.5
FD B 4020P
U nits
V
V
A
W
W /
°
C
°
C
°
C/W
°
C/W
Total P ower Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
O perating and S torage Junction Tem perature Range
0.25
-65 to +175
Therm al C haracteristics
Therm al Resistance, Junction-to- Case
Therm al Resistance, Junction-to- A m bient
(N ote 1)
4
62.5
40
Package O utlines and O rdering Inform ation
D evice M arking
FDP 4020P
D evice
FDP 4020P
R eel Size
13’’
Tape W idth
12m m
Q uantity
2500 units
2000
Fairchild Semiconductor International
FDP4020P Rev. B

FDP4020P Related Products

FDP4020P FDB4020P
Description MOSFET P-CH 20V 16A TO-220AB MOSFET P-CH 20V 16A TO-263AB
FET type P channel P channel
technology MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) at 25°C 16A(Ta) 16A(Ta)
Drive voltage (maximum Rds On, minimum Rds On) 2.5V,4.5V 2.5V,4.5V
Rds On (maximum value) when different Id, Vgs 80 milliohms @ 8A, 4.5V 80 milliohms @ 8A, 4.5V
Vgs (th) (maximum value) when different Id 1V @ 250µA 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 13nC @ 4.5V 13nC @ 4.5V
Vgs (maximum value) ±8V ±8V
Input capacitance (Ciss) at different Vds (maximum value) 665pF @ 10V 665pF @ 10V
Power dissipation (maximum) 37.5W(Tc) 37.5W(Tc)
Operating temperature -65°C ~ 175°C(TJ) -65°C ~ 175°C(TJ)
Installation type Through hole surface mount
Supplier device packaging TO-220AB TO-263AB
Package/casing TO-220-3 TO-263-3, D²Pak (2-lead + tab), TO-263AB
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