FDP4020P
September 2000
FDP4020P/FDB4020P
P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
General Description
This P-Channel low threshold MOSFET has been
designed for use as a linear pass element for low voltage
outputs. In addition, the part may be used as a low voltage
load switch when switching outputs on or off for power
management.The part may also be used in conjunction
with DC-DC converters requiring P-Channel.
Features
• -16 A, -20 V. R
DS(on)
= 0.08
Ω
@ V
GS
= -4.5 V
R
DS(on)
= 0.11
Ω
@ V
GS
= -2.5 V.
• Critical DC electrical parameters specified at elevated
temperature.
• High density cell design for extremely low R
DS(on)
.
• TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.
• 175°C maximum junction temperature rating.
S
G
D
A bsolute M axim um Ratings
Sym bol
V
DSS
V
G SS
I
D
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
Drain-S ource V oltage
G ate-S ource V oltage
Drain Current
- Continuous
- P ulsed
T
A
= 25°C unless otherw ise noted
Param eter
FD P4020P
-20
±
8
-16
-48
37.5
FD B 4020P
U nits
V
V
A
W
W /
°
C
°
C
°
C/W
°
C/W
Total P ower Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
O perating and S torage Junction Tem perature Range
0.25
-65 to +175
Therm al C haracteristics
Therm al Resistance, Junction-to- Case
Therm al Resistance, Junction-to- A m bient
(N ote 1)
4
62.5
40
Package O utlines and O rdering Inform ation
D evice M arking
FDP 4020P
D evice
FDP 4020P
R eel Size
13’’
Tape W idth
12m m
Q uantity
2500 units
2000
Fairchild Semiconductor International
FDP4020P Rev. B
FDP4020P
Electrical Characteristics
Symbol
BV
DSS
∆
BV
DSS
∆
T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Test Conditions
Min
-20
Typ
Max
Units
V
Off Characteristics
Drain-Source Breakdown
V
GS
= 0 V, I
D
= -250
µ
A
Voltage
Breakdown Voltage
I
D
= -250
µ
A, Referenced to 25
°
C
Temperature Coefficient
Zero Gate Voltage Drain Current V
DS
= -16 V, V
GS
= 0 V
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
(Note 2)
-28
-1
100
-100
mV/
°
C
µ
A
nA
nA
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
On Characteristics
V
GS(th)
∆
V
GS(th)
∆
T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= -250
µ
A
I
D
= -250
µ
A, Referenced to 25
°
C
V
GS
= -4.5 V,I
D
= -8 A,
V
GS
= -4.5 V,I
D
= -8 A,T
J
=125
°
C
V
GS
= -2.5 V,I
D
= -7 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -8 A
-0.4
-0.58
2
0.068
0.098
0.096
-1
V
mV/
°
C
0.08
0.13
0.110
Ω
I
D(on)
g
FS
-20
14
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
665
270
70
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= -5 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
Ω
8
24
50
29
16
38
80
45
13
ns
ns
ns
ns
nC
nC
nC
V
DS
= -5 V,
I
D
= -16 A, V
GS
= -4.5 V
9.5
1.3
2.2
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= -16 A
(Note 2)
(Note 2)
(Note 2)
-16
-48
-1.2
A
V
Notes:
1.
R
θJA
is the sum of the juntion-to-case and case-to-ambient thermal resistance.For T0-263 the device is mounted on circuit board with a 1in
2
pad
of 2 oz. copper.
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDP4020P Rev. B
FDP4020P
Typical Characteristics
40
-4.0V
-3.5V
24
-3.0V
2
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -4.5V
-I
D
, DRAIN CURRENT (A)
32
1.8
V
GS
= -2.0V
1.6
1.4
1.2
1
0.8
-2.5V
-3.0V
-3.5V
-4.0V
-4.5V
16
-2.5V
8
-2.0V
0
0
2
4
6
8
10
0
5
10
15
20
25
30
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DIRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.2
R
DS(ON)
, ON-RESISTANCE (OHM)
1.8
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
o
I
D
= -16A
V
GS
= -4.5V
I
D
= -8A
0.16
0.12
T
A
= 125 C
0.08
T
A
= 25 C
o
o
0.04
0
125
150
175
1.5
2
2.5
3
3.5
4
4.5
5
T
J
, JUNCTION TEMPERATURE ( C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
20
V
DS
= -5V
-I
D
, DRAIN CURRENT (A)
16
T
A
= -55 C
25 C
125 C
o
o
o
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
-I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
1
12
T
A
= 125 C
25 C
-55 C
o
o
o
8
0.01
4
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0.0001
0
0.4
0.8
1.2
1.6
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDP4020P Rev. B
FDP4020P
Typical Characteristics
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -16A
4
(continued)
V
DS
= -5V
-10V
1400
1200
CAPACITANCE (pF)
1000
800
600
400
200
C
OSS
C
RSS
0
4
8
12
16
20
C
ISS
f = 1 MHz
V
GS
= 0 V
-15V
3
2
1
0
0
3
6
Q
g
, GATE CHARGE (nC)
9
12
0
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
100
R
DS(ON)
LIMIT
-I
D
, DRAIN CURRENT (A)
100
µ
s
1ms
Figure 8. Capacitance Characteristics.
1000
SINGLE PULSE
800
POWER (W)
R
θ
JC
= 4 C/W
T
A
= 25 C
600
o
o
10
10ms
DC 100ms
1
400
V
GS
= -4.5V
SINGLE PULSE
R
θJC
= 4 C/W
T
A
= 25 C
o
o
200
0.1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.0001
0.001
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5
D = 0.5
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
=
4°C/W
0.1
0.2
0.2
0.05
Single Pulse
P(pk)
t
1
t
2
0.1
T
J
- T
A
= P * R
θ
JC (t)
Duty Cycle, D = t
1
/ t
2
0.05
0.0001
0.001
0.01
t
1
, TIME (sec)
0.1
1
10
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient themal response will change depending on the circuit board design.
FDP4020P Rev. B
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. F1
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