BD535J datasheet, PDF - EEWORLD Datasheet

BD535J: DescriptionTRANS NPN 60V 8A TO-220; Categorysemiconductor Discrete semiconductor; File Size88KB，2 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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TRANS NPN 60V 8A TO-220

Parameter Name	Attribute value
Transistor type	NPN
Current - Collector (Ic) (Maximum)	8A
Voltage - collector-emitter breakdown (maximum)	60V
Vce saturation value (maximum value) when different Ib,Ic	800mV @ 200mA，2A
Current - collector cutoff (maximum)	100µA
DC current gain (hFE) at different Ic, Vce (minimum value)	30 @ 2A，2V
Power - Max	50W
Frequency - Transition	12MHz
Operating temperature	150°C（TJ）
Installation type	Through hole
Package/casing	TO-220-3
Supplier device packaging	TO-220

	BD535J	BD533J	BD537J	BD537K	BD537KTU
Description	TRANS NPN 60V 8A TO-220	TRANS NPN 45V 8A TO-220	TRANS NPN 80V 8A TO-220	TRANS NPN 80V 8A TO-220	TRANS NPN 80V 8A TO-220
Transistor type	NPN	NPN	NPN	NPN	NPN
Current - Collector (Ic) (Maximum)	8A	8A	8A	8A	8A
Voltage - collector-emitter breakdown (maximum)	60V	45V	80V	80V	80V
Vce saturation value (maximum value) when different Ib,Ic	800mV @ 200mA，2A	800mV @ 200mA，2A	800mV @ 200mA，2A	800mV @ 200mA，2A	800mV @ 200mA，2A
Current - collector cutoff (maximum)	100µA	100µA	100µA	100µA	100µA
DC current gain (hFE) at different Ic, Vce (minimum value)	30 @ 2A，2V	30 @ 2A，2V	30 @ 2A，2V	40 @ 2A，2V	40 @ 2A，2V
Power - Max	50W	50W	50W	50W	50W
Frequency - Transition	12MHz	12MHz	12MHz	12MHz	12MHz
Operating temperature	150°C（TJ）	150°C（TJ）	150°C（TJ）	150°C（TJ）	150°C（TJ）
Installation type	Through hole	Through hole	Through hole	Through hole	Through hole
Package/casing	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Supplier device packaging	TO-220	TO-220	TO-220	TO-220	TO-220

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