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BD537KTU

Description
TRANS NPN 80V 8A TO-220
Categorysemiconductor    Discrete semiconductor   
File Size88KB,2 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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BD537KTU Overview

TRANS NPN 80V 8A TO-220

BD537KTU Parametric

Parameter NameAttribute value
Transistor typeNPN
Current - Collector (Ic) (Maximum)8A
Voltage - collector-emitter breakdown (maximum)80V
Vce saturation value (maximum value) when different Ib,Ic800mV @ 200mA,2A
Current - collector cutoff (maximum)100µA
DC current gain (hFE) at different Ic, Vce (minimum value)40 @ 2A,2V
Power - Max50W
Frequency - Transition12MHz
Operating temperature150°C(TJ)
Installation typeThrough hole
Package/casingTO-220-3
Supplier device packagingTO-220

BD537KTU Related Products

BD537KTU BD535J BD533J BD537J BD537K
Description TRANS NPN 80V 8A TO-220 TRANS NPN 60V 8A TO-220 TRANS NPN 45V 8A TO-220 TRANS NPN 80V 8A TO-220 TRANS NPN 80V 8A TO-220
Transistor type NPN NPN NPN NPN NPN
Current - Collector (Ic) (Maximum) 8A 8A 8A 8A 8A
Voltage - collector-emitter breakdown (maximum) 80V 60V 45V 80V 80V
Vce saturation value (maximum value) when different Ib,Ic 800mV @ 200mA,2A 800mV @ 200mA,2A 800mV @ 200mA,2A 800mV @ 200mA,2A 800mV @ 200mA,2A
Current - collector cutoff (maximum) 100µA 100µA 100µA 100µA 100µA
DC current gain (hFE) at different Ic, Vce (minimum value) 40 @ 2A,2V 30 @ 2A,2V 30 @ 2A,2V 30 @ 2A,2V 40 @ 2A,2V
Power - Max 50W 50W 50W 50W 50W
Frequency - Transition 12MHz 12MHz 12MHz 12MHz 12MHz
Operating temperature 150°C(TJ) 150°C(TJ) 150°C(TJ) 150°C(TJ) 150°C(TJ)
Installation type Through hole Through hole Through hole Through hole Through hole
Package/casing TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier device packaging TO-220 TO-220 TO-220 TO-220 TO-220
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