CYIS1SM0250-AA
CYIS1SM0250-AA STAR250 250K Pixel
Radiation Hard CMOS Image Sensor
Features
The STAR250 sensor is a CMOS Active Pixel Sensor,
designed for application in Optical Inter-Satellite Link beam
trackers. The STAR250 is part of broader range of applications
such as space-borne systems like sun sensing and star
tracking. It features 512 by 512 pixels on a 25
µm
pitch, on chip
Fixed Pattern Noise (FPN) correction, a programmable gain
amplifier, and a 10bit ADC. Flexible operating (multiple
windowing, subsampling) is possible by direct addressable X-
and Y- register.
The sensor has an outstanding radiation tolerance that is
observed by using proprietary technology modifications and
design techniques. Two versions of sensors are available,
STAR250 and STAR250BK7. STAR250 has a quartz glass lid
and air in the cavity. The STAR250BK7 has a BK7G18 glass
lid with anti reflective coating. The cavity is filled with N
2
increasing the temperature operating range.
Key Features
Parameter
Optical Format
Active Pixels
Pixel Size
Shutter Type
Maximum Data Rate /
Master Clock
Frame Rate
ADC Resolution
Sensitivity
Dynamic Range
kTC Noise
Dark Current
Supply Voltage
Operating Temperature
Typical Value
1 Inch
512 x 512
25
µm
Electronic
8 MHz
Up to 30 full frames/s
10 bit
3340 V.m
2
/W.s
74dB (5000:1)
76 e
-
4750 e
-
/s at RT
5V
0°C - +65°C (STAR250)
-40°C - +85°C (STAR250BK7)
Gamma Total Dose
Radiation tolerance
Increase in average dark current
< 1 nA/cm
2
after 3 MRad
Image operation with dark signal
< 1V/s after 10 Mrad
demonstrated (Co60)
Key Features
(continued)
Parameter
Proton Radiation
Tolerance
SEL Threshold
Color Filter Array
Packaging
Power Consumption
Typical Value
1% of pixels has an increase in
dark current > 1 nA/cm
2
after
3*10^10 protons at 11.7 MeV
> 80 MeV cm
3
mg
-1
Mono
84 pin JLCC
< 350 mW
Applications
• Satellites
• Spacecraft monitoring
• Nuclear inspection
Cypress Semiconductor Corporation
Document Number: 38-05713 Rev. *B
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised December 12, 2006
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CYIS1SM0250-AA
Specifications
General Specifications
Table 1. General Specifications
Parameter
Pixel Architecture
Pixel Size
Resolution
Pixel Rate
Shutter Type
Frame Rate
Extended dynamic range
Programmable gain
Supply voltage VDD
Operational temperature
range
Package
Electro-optical Specifications
Overview
Table 2. Electro-optical Specifications
Parameter
Detector Technology
Pixel Structure
Photodiode
Sensitive Area Format
Pixel Size
Spectral Range
Quantum Efficiency x Fill
Factor
Full Well Capacity
Linear Range within + 1%
Output Signal Swing
Conversion Gain
Temporal Noise
Dynamic Range
Specification (all typical)
CMOS Active Pixel Sensor
3-transistor active pixel
4 diodes per pixel
High fill factor photodiode
512 by 512 pixels
25 x 25
µm
2
200 - 1000 nm
Max. 35%
311K electrons
128K electrons
1.68 V
5.7
µV/e
-
76 e
-
74 dB (5000:1)
See curves
Above 20% between 450 and 750 nm
(Note: Metal FillFactor (MFF) is 63%)
When output amplifier gain = 1
When output amplifier gain = 1
When output amplifier gain = 1
When output amplifier gain = 1 near dark
Dominated by kTC
At the analog output
Radiation-tolerant pixel design
4 Photodiodes for improved MTF
Comment
Specification
3-transistor active pixel
4 diodes per pixel
25 x 25
µm
2
512 by 512 pixels
8 Mps
Electronic
29 full frames/second
Double slope
Programmable between x1, x2, x4, x8
5V
0°C - +65°C
-40°C - +85°C
84 pins JLCC
STAR250 (Quartz glass lid, air in cavity)
STAR250BK7 (BK7G18 glass lid, N
2
in cavity)
Selectable through pins G0 and G1
Integration time is variable in time, steps equal to the row
readout time
Remarks
Radiation-tolerant pixel design
4 photodiodes for improved MTF
Document Number: 38-05713 Rev. *B
Page 2 of 24
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CYIS1SM0250-AA
Table 2. Electro-optical Specifications
(continued)
Parameter
FPN (Fixed Pattern Noise)
PRNU (Photo Response
Non-uniformity)
Average Dark Current
Signal
DSNU (Dark Signal Non
Uniformity)
MTF
Optical Cross Talk
Anti-blooming Capacity
Output Amplifier Gain
Windowing
Electronic Shutter Range
ADC
ADC Linearity
Missing Codes
ADC Setup Time
ADC Delay Time
Power Dissipation
Specification (all typical)
1 < 0.1% of full well
(typical)
Local: 1 = 0.39% of response
Global: 1 = 1.3% of response
4750 e
-
/s
3805 e
-
/s RMS
Horizontal: 0.36
Vertical: 0.39
5% (TBC) to nearest neighbor if central
pixel is homogeneously illuminated
x 1000 to x 100 000
1, 2, 4 or 8
X and Y 9-bit programmable shift
registers
1: 512
10 bit
± 3.5 counts
none
310 ns
125 ns
< 350 mW
Average at 8 MHz pixel rate
To reach 99% of final value
INL
Controlled by 2 bits
Indicate upper left pixel of each window
Integration time is variable in time steps equal to the row
readout time
Comment
Measured local, on central image area 50% of pixels, in
the dark
Measured in central image area 50% of pixels, at Qsat/2
At RT
At RT, scale linearly with integration time
at 600 nm.
Document Number: 38-05713 Rev. *B
Page 3 of 24
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CYIS1SM0250-AA
Spectral Response Curve
Figure 1. Spectral Response Curve
0.2
QE 0.4
QE 0.3
QE 0.2
0.15
Spectral respnse [A/W]
0.1
QE 0.1
0.05
QE 0.05
QE 0.01
0
400
500
600
700
800
900
1000
1100
Wavelength [nm]
Figure 2. UV Region Spectral Response Curve
STAR250
UV-m easurem ent
1,00E+00
200
FF * Spectral Response [A/W]
250
300
350
400
450
QE 100%
500
1,00E-01
QE 10%
1,00E-02
QE 1%
1,00E-03
1,00E-04
WaveLength [nm ]
Document Number: 38-05713 Rev. *B
Page 4 of 24
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CYIS1SM0250-AA
Pixel Profile
Figure 3. Pixel Profile
horizontal pixel profile
Vertica pixel profile
Imaginary pixel boundaries
Relative profile
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
Scan distance [mm]
The pixel profile is measured using the 'knife edge' method:
the image of a target containing a black to white transition is
scanned over a certain pixel with subpixel resolution steps.
The image sensors settings and the illumination conditions are
adjusted such that the transition covers 50% of the output
range. The scan is performed both horizontal and vertical.
Document Number: 38-05713 Rev. *B
Page 5 of 24
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