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BDW93/A/B/C
BDW93/A/B/C
Hammer Drivers,
Audio Amplifiers Applications
• Power Darlington TR
• Complement to BDW94, BDW94A, BDW94B and BDW94C respectively
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: BDW93
: BDW93A
: BDW93B
: BDW93C
V
CEO
Collector-Emitter Voltage
: BDW93
: BDW93A
: BDW93B
: BDW93C
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
45
60
80
100
45
60
80
100
12
15
0.2
80
150
- 65 ~ 150
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Parameter
Value
Units
I
C
I
CP
I
B
P
C
T
J
T
STG
Thermal Characteristics
T
C
=25°C unless otherwise noted
Symbol
R
θjc
Parameter
Thermal Resistance
Junction to Case
Value
1.5
Units
°C/W
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW93/A/B/C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BDW93
: BDW93A
: BDW93B
: BDW93C
Collector Cut-off Current
: BDW93
: BDW93A
: BDW93B
: BDW93C
I
CEO
Collector Cut-off Current
: BDW93
: BDW93A
: BDW93B
: BDW93C
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
V
CE
= 45V, I
B
= 0
V
CE
= 60V, I
B
= 0
V
CE
= 80V, I
B
= 0
V
CE
= 100V, I
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 3A
V
CE
= 3V, I
C
= 5A
V
CE
= 3V, I
C
= 10A
I
C
= 5A, I
B
= 20mA
I
C
= 10A, I
B
= 100mA
I
C
= 5A, I
B
= 20mA
I
C
= 10A, I
B
= 100mA
I
F
= 5A
I
F
= 10A
1.3
1.8
1000
750
100
1
1
1
1
2
20000
2
3
2.5
4
2
4
V
V
V
V
V
V
mA
mA
mA
mA
mA
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
100
100
100
100
µA
µA
µA
µA
Test Condition
I
C
= 100mA, I
B
= 0
Min.
45
60
80
100
Typ.
Max.
Units
V
V
V
V
I
CBO
V
CE
(sat)
V
BE
(sat)
V
F
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
* Parallel Diode Forward Voltage
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW93/A/B/C
Typical characteristics
100k
10
V
CE
= 3V
I
C
= 250 I
B
10k
V
CE
(sat) [V], SATURATION VOLTAGE
1
10
100
h
FE
, DC CURRENT GAIN
1
1k
100
0.1
0.1
0.1
1
10
100
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage
20
1000
V
CE
= 3 V
16
f=1MHz
12
C
ob
[pF], OUTPUT CAPACTIANCE
I
E
=0
I
C
[A], COLLECTOR CURRENT
100
8
4
0
0.0
10
0.8
1.6
2.4
3.2
4.0
1
10
100
V
BE
[V], BASE-EMITTER VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Collector Output Capacitance
100
100
I
C
[A], COLLECTOR CURRENT
I
C
MAX.
10
5 ms 1 ms
100 us
P
D
[W], POWER DISSIPATION
80
60
DC
40
1
BDW93
BDW93A
BDW93B
BDW93C
0.1
1
10
100
1000
20
0
0
25
50
o
75
100
125
150
175
200
V
CE
[V], COLLECTOR EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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