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1N4933GP

Description
DIODE GEN PURP 50V 1A DO41
Categorysemiconductor    Discrete semiconductor   
File Size43KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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1N4933GP Overview

DIODE GEN PURP 50V 1A DO41

1N4933GP Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)50V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf1.2V @ 1A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)150ns
Current at different Vr - Reverse leakage current5µA @ 50V
Capacitance at different Vr, F12pF @ 4V,1MHz
Installation typeThrough hole
Package/casingDO-204AL, DO-41, axial
Supplier device packagingDO-41
Operating Temperature - Junction-65°C ~ 175°C
1N4933GP-1N4937GP
1N4933GP - 1N4937GP
Features
Low forward voltage drop.
High surge current capability.
High reliability.
High current capability.
DO-41
COLOR BAND DENOTES CATHODE
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
4933G
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current,
.375 " lead length @ T
A
= 75°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
50
4934
100
Value
4935
200
1.0
30
-65 to +175
-65 to +175
4936
400
4937
600
Units
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Value
2.73
55
Units
W
°C/W
Electrical Characteristics
Symbol
V
F
t
rr
I
R
C
T
T
A
= 25°C unless otherwise noted
Parameter
4933G
Forward Voltage @ 1.0 A
Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 125°C
Total Capacitance
V
R
= 4.0 V, f = 1.0 MHz
4934
Device
4935
1.2
150
5.0
100
15
4936
4937
Units
V
ns
µA
µA
pF
2001
Fairchild Semiconductor Corporation
1N4933GP-1N4937GP, Rev. C

1N4933GP Related Products

1N4933GP 1N4936 1N4936GP 1N4935GP 1N4937GP
Description DIODE GEN PURP 50V 1A DO41 Rectifiers 1.0a Rectifier Fast Recovery Rectifiers 1.0a Rectifier Fast Recovery DIODE GEN PURP 200V 1A DO41 DIODE GEN PURP 600V 1A DO41
Diode type standard RECTIFIER DIODE - standard standard
Voltage - DC Reverse (Vr) (Maximum) 50V - - 200V 600V
Current - average rectification (Io) 1A - - 1A 1A
Voltage at different If - Forward (Vf 1.2V @ 1A - - 1.2V @ 1A 1.2V @ 1A
speed Fast recovery = < 500 ns, > 200mA (Io) - - Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr) 150ns - - 150ns 150ns
Current at different Vr - Reverse leakage current 5µA @ 50V - - 5µA @ 200V 5µA @ 600V
Capacitance at different Vr, F 12pF @ 4V,1MHz - - 12pF @ 4V,1MHz 12pF @ 4V,1MHz
Installation type Through hole - - Through hole Through hole
Package/casing DO-204AL, DO-41, axial - - DO-204AL, DO-41, axial DO-204AL, DO-41, axial
Supplier device packaging DO-41 - - DO-41 DO-41
Operating Temperature - Junction -65°C ~ 175°C - - -50°C ~ 150°C -50°C ~ 150°C
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