BSP51 NPN Darlington Transistor
June 2007
BSP51
NPN Darlington Transistor
This device is designed for applications requiring extremly high current gain at collector currents to 500mA.
Sourced from process 03.
4
SOT-223
3
1
2
1. Base 2. Collector 3. Emitte
r
Absolute Maximum Ratings
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J,
T
STG
NOTES:
* T
a
= 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (Continuous)
Junction Temperature, Storage Temperature
Value
80
90
5.0
500
-55 ~ +150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Symbol
Off Characteristics
V
(BR)CBO
V
(BR)EBO
I
CES
I
EBO
* T
a
= 25°C unless otherwise noted
Parameter
Test Condition
MIN
MAX
Units
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 100
μA,
I
E
= 0
I
E
= 10
μA,
I
C
= 0
V
CE
= 80 V, I
BE
= 0
V
EB
= 4.0 V, I
C
= 0
90
5.0
10
10
V
V
μA
μA
On Characteristics
h
FE
V
CE(
sat
)
V
BE(
sat
)
DC Current Gain
I
C
= 150 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
1000
2000
1.3
1.9
V
V
Collector-Emitter Saturation Voltage
*
I
C
= 500 mA, I
B
= 0.5 mA
Base-Emitter Saturation Voltage
*
I
C
= 500 mA, I
B
= 0.5 mA
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BSP51 Rev. A
tm
BSP51 NPN Darlington Transistor
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This datasheet contains the design specifications for
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Rev. I23
3
BSP51 Rev. A
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