SOT23 NPN SILICON PLANAR
VHF/UHF TRANSISTOR
ISSUE 2 JANUARY 1996
PARTMARKING DETAILS
3B
FMMT918
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
Input Capacitance
Noise Figure
Common Emitter
Power Gain
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
MIN.
30
15
3
0.05
0.4
1.0
20
600
3.0
1.7
1.6
6.0
15
MHz
pF
pF
pF
dB
dB
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
TYP.
MAX.
VALUE
30
15
3
100
330
-55 to +150
UNIT
V
V
V
µ
A
SOT23
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
CONDITIONS.
I
C
=1
µ
A, I
E
=0
I
C
=3mA, I
B
=0*
I
E
=10
µ
A, I
C
=0
V
CB
=15V, I
E
=0
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
I
C
=3mA, V
CE
=1V
I
C
=4mA, V
CE
=10V
f=100MHz
V
CB
=0V, f=1MHz
V
CB
=10V, f=1MHz
V
EB
=0.5V,f=1MHz
V
CE
=6V, I
C
=1mA
f=60MHz, R
G
=400
Ω
V
CB
=12V, I
C
=6mA
f=200MHz
Collector Cut-Off Current I
CBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
obo
C
ibo
N
G
pe
V
V
*Measured under pulsed conditions. Pulse Width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 - 168
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