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1N4148

Description
0.2 A, SILICON, SIGNAL DIODE, DO-35
CategoryDiscrete semiconductor    diode   
File Size323KB,3 Pages
ManufacturerFORMOSA
Websitehttp://www.formosams.com/
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1N4148 Overview

0.2 A, SILICON, SIGNAL DIODE, DO-35

1N4148 Parametric

Parameter NameAttribute value
MakerFORMOSA
Parts packaging codeDO-35
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current2 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.15 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.5 W
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.004 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
F
ORMOSA
MS
1N4148/1N4448
High-speed switching diode
Features
1.
2.
High reliability
High speed (t
rr
=
4 ns)
Applications
Extreme fast switches
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
T
j
=25?
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward voltage
Forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
V
R
=0
I=4mm T
L
=
25?
t
p
=1µ s
Test Conditions
Type
Symbol
V
RRM
V
R
I
FSM
I
FRM
I
F
I
FAV
P
V
T
j
T
stg
Value
100
75
2
500
300
150
500
175
-65~+175
Unit
V
V
A
mA
mA
mA
mW
?
?
Maximum Thermal Resistance
T
j
=25?
Parameter
Junction ambient
Test Conditions
I=4mm T
L
=constant
Symbol
R
thJA
Value
350
Unit
K/W
FORMOSA MS
1

1N4148 Related Products

1N4148 1N4448
Description 0.2 A, SILICON, SIGNAL DIODE, DO-35 0.15 A, SILICON, SIGNAL DIODE, DO-204AH
Maker FORMOSA FORMOSA
Parts packaging code DO-35 DO-35
package instruction O-LALF-W2 O-LALF-W2
Contacts 2 2
Reach Compliance Code unknow unknown
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 0.72 V
JEDEC-95 code DO-35 DO-35
JESD-30 code O-LALF-W2 O-LALF-W2
Maximum non-repetitive peak forward current 2 A 2 A
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Maximum output current 0.15 A 0.15 A
Package body material GLASS GLASS
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Maximum power dissipation 0.5 W 0.5 W
Maximum repetitive peak reverse voltage 100 V 100 V
Maximum reverse recovery time 0.004 µs 0.004 µs
surface mount NO NO
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL

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