SST39VF080-90-4C-B3KE datasheet, PDF

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SST39VF080-90-4C-B3KE: DescriptionFlash, 1MX8, 90ns, PBGA48, 6 X 8 MM, 0.8 MM PITCH, LEAD FREE, MO-210AB-1, TFBGA-48; Categorystorage storage; File Size353KB，25 Pages; ManufacturerSST; Websitehttp://www.ssti.com; Environmental Compliance

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SST39VF080-90-4C-B3KE Overview

Flash, 1MX8, 90ns, PBGA48, 6 X 8 MM, 0.8 MM PITCH, LEAD FREE, MO-210AB-1, TFBGA-48

SST39VF080-90-4C-B3KE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	1984614295
Parts packaging code	BGA
package instruction	TFBGA, BGA48,6X8,32
Contacts	48
Reach Compliance Code	unknown
ECCN code	EAR99
YTEOL	0
Maximum access time	90 ns
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PBGA-B48
JESD-609 code	e3
length	8 mm
memory density	8388608 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of departments/size	256
Number of terminals	48
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX8
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA48,6X8,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Programming voltage	2.7 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Department size	4K
Maximum standby current	0.00002 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	MATTE TIN
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
switch bit	YES
type	NOR TYPE
width	6 mm

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8 Mbit (x8) Multi-Purpose Flash

SST39LF080 / SST39VF080

SST39LF/VF0803.0 & 2.7V 8Mb (x8) MPF memories

EOL Data Sheet

FEATURES:

• Organized as 1M x8

• Single Voltage Read and Write Operations

– 3.0-3.6V for SST39LF080

– 2.7-3.6V for SST39VF080

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

(typical values at 14 MHz)

– Active Current: 12 mA (typical)

– Standby Current: 4 µA (typical)

– Auto Low Power Mode: 4 µA (typical)

• Sector-Erase Capability

– Uniform 4 KByte sectors

• Block-Erase Capability

– Uniform 64 KByte blocks

• Fast Read Access Time:

– 55 ns for SST39LF080

– 70 and 90 ns for SST39VF080

• Latched Address and Data

• Fast Erase and Byte-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

15 seconds (typical) for SST39LF/VF080

• Automatic Write Timing

– Internal V

Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 40-lead TSOP (10mm x 20mm)

– 48-ball TFBGA (6mm x 8mm)

PRODUCT DESCRIPTION

The SST39LF/VF080 devices are 1M x8 CMOS Multi-Pur-

pose Flash (MPF) manufactured with SST’s proprietary,

high-performance CMOS SuperFlash technology. The

split-gate cell design and thick-oxide tunneling injector

attain better reliability and manufacturability compared with

alternate approaches. The SST39LF080 write (Program or

Erase) with a 3.0-3.6V power supply. The SST39VF080

write (Program or Erase) with a 2.7-3.6V power supply.

They conform to JEDEC standard pinouts for x8 memories.

Featuring high performance Byte-Program, the SST39LF/

VF080 devices provide a typical Byte-Program time of 14

µsec. The devices use Toggle Bit or Data# Polling to indi-

cate the completion of Program operation. To protect

against inadvertent write, they have on-chip hardware and

Software Data Protection schemes. Designed, manufac-

tured, and tested for a wide spectrum of applications,

these devices are offered with a guaranteed typical

endurance of 10,000 cycles. Data retention is rated at

greater than 100 years.

The SST39LF/VF080 devices are suited for applications

that require convenient and economical updating of pro-

gram, configuration, or data memory. For all system appli-

cations, they significantly improve performance and

reliability, while lowering power consumption. They inher-

ently use less energy during Erase and Program than alter-

S71146-07-EOL

6/07

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

native flash technologies. The total energy consumed is a

function of the applied voltage, current, and time of applica-

tion. Since for any given voltage range, the SuperFlash

technology uses less current to program and has a shorter

erase time, the total energy consumed during any Erase or

Program operation is less than alternative flash technolo-

gies. They also improve flexibility while lowering the cost for

program, data, and configuration storage applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet high density, surface mount requirements, the

SST39LF/VF080 are offered in 40-lead TSOP and 48-

ball TFBGA packages. See Figures 1 and 2 for pin

assignments.

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