SST39SF010A-45-4I-WHE datasheet, PDF

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SST39SF010A-45-4I-WHE: Description512K X 8 FLASH 5V PROM, 70 ns, PDSO32; Categorystorage; File Size290KB，24 Pages; ManufacturerSST; Websitehttp://www.ssti.com

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SST39SF010A-45-4I-WHE Overview

512K X 8 FLASH 5V PROM, 70 ns, PDSO32

SST39SF010A-45-4I-WHE Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	32
Minimum operating temperature	-40 Cel
Maximum operating temperature	85 Cel
Rated supply voltage	5 V
Minimum supply/operating voltage	4.5 V
Maximum supply/operating voltage	5.5 V
Processing package description	8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32
each_compli	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	Active
ype	NOR TYPE
sub_category	Flash Memories
ccess_time_max	70 ns
command_user_interface	YES
data_polling	YES
jesd_30_code	R-PDSO-G32
jesd_609_code	e3
storage density	4.19E6 bi
Memory IC type	FLASH
memory width	8
moisture_sensitivity_level	NOT SPECIFIED
umber_of_sectors_size	128
Number of digits	524288 words
Number of digits	512K
operating mode	ASYNCHRONOUS
organize	512KX8
Packaging Materials	PLASTIC/EPOXY
ckage_code	TSSOP
ckage_equivalence_code	TSSOP32,.56,20
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
serial parallel	PARALLEL
eak_reflow_temperature__cel_	260
wer_supplies__v_	5
gramming_voltage__v_	5
qualification_status	COMMERCIAL
seated_height_max	1.2 mm
sector_size__words_	4K
standby_current_max	1.00E-4 Am
Maximum supply voltage	0.0350 Am
surface mount	YES
Craftsmanship	CMOS
Temperature level	INDUSTRIAL
terminal coating	MATTE TIN
Terminal form	GULL WING
Terminal spacing	0.5000 mm
Terminal location	DUAL
ime_peak_reflow_temperature_max__s_	40
ggle_bi	YES
length	12.4 mm
width	8 mm

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1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

SST39SF010A / 020A / 0405.0V 1Mb / 2Mb / 4Mb (x8) MPF memories

Data Sheet

FEATURES:

• Organized as 128K x8 / 256K x8 / 512K x8

• Single 4.5-5.5V Read and Write Operations

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

(typical values at 14 MHz)

– Active Current: 10 mA (typical)

– Standby Current: 30 µA (typical)

• Sector-Erase Capability

– Uniform 4 KByte sectors

• Fast Read Access Time:

– 45 ns

– 70 ns

• Latched Address and Data

• Fast Erase and Byte-Program

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

2 seconds (typical) for SST39SF010A

4 seconds (typical) for SST39SF020A

8 seconds (typical) for SST39SF040

• Automatic Write Timing

– Internal V

Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• TTL I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 32-pin PDIP

PRODUCT DESCRIPTION

The SST39SF010A/020A/040 are CMOS Multi-Purpose

Flash (MPF) manufactured with SST’s proprietary, high

performance CMOS SuperFlash technology. The split-gate

cell design and thick oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches. The SST39SF010A/020A/040 devices write

(Program or Erase) with a 4.5-5.5V power supply. The

SST39SF010A/020A/040 devices conform to JEDEC stan-

dard pinouts for x8 memories.

Featuring high performance Byte-Program, the

SST39SF010A/020A/040 devices provide a maximum

Byte-Program time of 20 µsec. These devices use Toggle

Bit or Data# Polling to indicate the completion of Program

operation. To protect against inadvertent write, they have

on-chip hardware and Software Data Protection schemes.

Designed, manufactured, and tested for a wide spectrum of

applications, these devices are offered with a guaranteed

typical endurance of 10,000 cycles. Data retention is rated

at greater than 100 years.

The SST39SF010A/020A/040 devices are suited for appli-

cations that require convenient and economical updating of

program, configuration, or data memory. For all system

applications, they significantly improve performance and

reliability, while lowering power consumption. They inher-

ently use less energy during erase and program than alter-

native flash technologies. The total energy consumed is a

S71147-06-000

8/04

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

function of the applied voltage, current, and time of applica-

tion. Since for any given voltage range, the SuperFlash

technology uses less current to program and has a shorter

erase time, the total energy consumed during any Erase or

Program operation is less than alternative flash technolo-

gies. These devices also improve flexibility while lowering

the cost for program, data, and configuration storage appli-

cations.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet high density, surface mount requirements, the

SST39SF010A/020A/040 are offered in 32-lead PLCC and

32-lead TSOP packages. A 600 mil, 32-pin PDIP is also

available. See Figures 1, 2, and 3 for pin assignments.

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