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SST25LF040A-33-4C-QAE

Description
2M X 1 FLASH 3V PROM, PDSO8
Categorystorage   
File Size279KB,26 Pages
ManufacturerSST
Websitehttp://www.ssti.com
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SST25LF040A-33-4C-QAE Overview

2M X 1 FLASH 3V PROM, PDSO8

SST25LF040A-33-4C-QAE Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Maximum operating temperature70 Cel
Minimum operating temperature0.0 Cel
Maximum supply/operating voltage3.6 V
Minimum supply/operating voltage3 V
Rated supply voltage3.3 V
maximum clock frequency33 MHz
Processing package description4.90 X 6 MM, ROHS COMPLIANT, MS-012AA, SOIC-8
Lead-freeYes
EU RoHS regulationsYes
stateTRANSFERRED
CraftsmanshipCMOS
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal spacing1.27 mm
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
Temperature levelCOMMERCIAL
memory width1
organize2M X 1
storage density2.10E6 deg
operating modeSYNCHRONOUS
Number of digits2.10E6 words
Number of digits2M
Memory IC typeFLASH 3V PROM
serial parallelSERIAL
2 Mbit / 4 Mbit SPI Serial Flash
SST25LF020A / SST25LF040A
SST25LF020A / 040A2Mb / 4Mb Serial Peripheral Interface (SPI) flash memory
Data Sheet
FEATURES:
• Single 3.0-3.6V Read and Write Operations
• Serial Interface Architecture
– SPI Compatible: Mode 0 and Mode 3
• 33 MHz Max Clock Frequency
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Read Current: 7 mA (typical)
– Standby Current: 8 µA (typical)
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
• Fast Erase and Byte-Program:
– Chip-Erase Time: 70 ms (typical)
– Sector- or Block-Erase Time: 18 ms (typical)
– Byte-Program Time: 14 µs (typical)
• Auto Address Increment (AAI) Programming
– Decrease total chip programming time over
Byte-Program operations
• End-of-Write Detection
– Software Status
• Hold Pin (HOLD#)
– Suspends a serial sequence to the memory
without deselecting the device
• Write Protection (WP#)
– Enables/Disables the Lock-Down function of the
status register
• Software Write Protection
– Write protection through Block-Protection bits in
status register
• Temperature Range
– Commercial: 0°C to +70°C
– Industrial: -40°C to +85°C
– Extended: -20°C to +85°C
• Packages Available
– 8-lead SOIC 150 mil body width
for SST25LF020A
– 8-lead SOIC 200 mil body width
for SST25LF040A
– 8-contact WSON (5mm x 6mm)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
SST’s serial flash family features a four-wire, SPI-com-
patible interface that allows for a low pin-count package
occupying less board space and ultimately lowering total
system costs. SST25LF020A/040A SPI serial flash
memories are manufactured with SST’s proprietary, high
performance CMOS SuperFlash technology. The split-
gate cell design and thick-oxide tunneling injector attain
better reliability and manufacturability compared with
alternate approaches.
The SST25LF020A/040A devices significantly improve
performance, while lowering power consumption. The
total energy consumed is a function of the applied volt-
age, current, and time of application. Since for any given
voltage range, the SuperFlash technology uses less cur-
rent to program and has a shorter erase time, the total
energy consumed during any Erase or Program operation
is less than alternative flash memory technologies. The
SST25LF020A/040A devices operate with a single 3.0-
3.6V power supply.
The SST25LF020A devices are offered in an 8-lead SOIC
150 mil body width (SA) package. The SST25LF040A
devices are offered in an 8-lead SOIC 200 mil body width
(S2A) package. All densities are offered in the 8-contact
WSON package. See Figure 1 for the pin assignments.
©2006 Silicon Storage Technology, Inc.
S71242-05-000
1/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
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