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BUK962R6-40E,118

Description
MOSFET N-CH 40V 100A D2PAK
Categorysemiconductor    Discrete semiconductor   
File Size714KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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BUK962R6-40E,118 Overview

MOSFET N-CH 40V 100A D2PAK

BUK962R6-40E,118 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)40V
Current - Continuous Drain (Id) at 25°C100A(Tc)
Rds On (maximum value) when different Id, Vgs2.4 milliohms @ 25A, 10V
Vgs (th) (maximum value) when different Id2.1V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)80.6nC @ 32V
Input capacitance (Ciss) at different Vds (maximum value)10285pF @ 25V
FET function-
Power dissipation (maximum)263W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingD2PAK
Package/casingTO-263-3, D²Pak (2-lead + tab), TO-263AB
BUK962R6-40E
28 July 2016
N-channel TrenchMOS logic level FET
Product data sheet
1. General description
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
2. Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
[1]
Min
-
-
-
Typ
-
-
-
Max
40
100
263
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
2.35
2.8
Dynamic characteristics
Q
GD
V
GS
= 5 V; I
D
= 25 A; V
DS
= 32 V;
Fig. 13; Fig. 14
[1]
Continuous current is limited by package.
-
29.1
-
nC
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