DISCRETE SEMICONDUCTORS
DATA SHEET
BLT50
UHF power transistor
Product specification
April 1991
Philips Semiconductors
Product specification
UHF power transistor
FEATURES
•
SMD encapsulation
•
Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a SOT223 surface
mounted envelope and designed
primarily for use in hand-held radio
equipment in the 470 MHz
communications band.
PINNING - SOT223
BLT50
QUICK REFERENCE DATA
RF performance at T
s
≤
60
°C
in a common emitter class-B test circuit
(note 1).
MODE OF OPERATION
c.w. narrow band
Note
1. T
s
= temperature at soldering point of collector tab.
PIN CONFIGURATION
age
f (MHz) V
CE
(V)
470
7.5
P
L
(W)
1.2
G
p
(dB)
>
10
η
c
(%)
>
55
4
c
PIN
1
2
3
4
DESCRIPTION
emitter
base
emitter
collector
1
Top view
handbook, halfpage
b
MBB012
e
2
3
MSB002 - 1
Fig.1 Simplified outline and symbol.
April 1991
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
, I
C(AV)
I
CM
P
tot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
collector current
total power dissipation
CONDITIONS
open emitter
open base
open collector
DC or average value
peak value
f
>
1 MHz
f
>
1 MHz;
T
s
= 103
°C
(note 1)
−
−
−
−
−
−
MIN.
BLT50
MAX.
20
10
3
500
1.5
2
UNIT
V
V
V
mA
A
W
T
stg
T
j
Note
storage temperature range
operating junction temperature
−65
−
150
175
°C
°C
1. T
s
= temperature at soldering point of collector tab.
handbook, halfpage
1
MEA217
IC
(A)
0.5
0.2
0.1
1
10
VCE (V)
10
2
T
s
= 103
°C.
Fig.2 DC SOAR.
THERMAL RESISTANCE
SYMBOL
R
th j-s(DC)
PARAMETER
from junction to soldering point
CONDITIONS
P
tot
= 2 W; T
s
= 103
°C
MAX.
36
UNIT
K/W
April 1991
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS
T
j
= 25
°C.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
E
SBR
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-emitter leakage current
DC current gain
second breakdown energy
CONDITIONS
open emitter;
I
C
= 5 mA
open base;
I
C
= 10 mA
open collector;
I
E
= 1 mA
V
BE
= 0;
V
CE
= 10 V
V
CE
= 5 V;
I
C
= 300 mA
L = 25 mH;
R
BE
= 10
Ω;
f = 50 Hz
V
CB
= 7.5 V;
I
E
= I
e
= 0;
f = 1 MHz
V
CE
= 7.5 V;
I
C
= 0;
f = 1 MHz
MIN.
20
10
3
−
25
0.55
TYP.
−
−
−
−
−
−
BLT50
MAX.
−
−
−
250
−
−
UNIT
V
V
V
µA
mJ
C
c
collector capacitance
−
4.7
6
pF
C
re
feedback capacitance
−
2.9
4.5
pF
MEA218
handbook,
10
halfpage
Cc
(pF)
8
6
4
2
0
0
2
4
6
8
10
VCB (V)
I
E
= i
e
= 0; f = 1 MHz.
Fig.3
Collector capacitance as a function of
collector-base voltage, typical values.
April 1991
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION
RF performance at T
s
≤
60
°C
in a common emitter class-B test circuit.
MODE OF
OPERATION
c.w. narrow band
f (MHz)
470
7.5
V
CE
(V)
1.2
P
L
(W)
G
p
(dB)
>
10
typ. 11.2
BLT50
η
c
(%)
>
55
typ. 65
MEA219
handbook,
16
halfpage
2
handbook, halfpage
100
(%)
80
MEA220
Gp
(dB)
12
Gp
η
PL
(W)
8
η
60
1
4
40
0
0.6
0
1.0
1.4
1.8
PL (W)
2.2
0
100
PD (mW)
200
V
CE
= 7.5 V; f = 470 MHz.
V
CE
= 7.5 V; f = 470 MHz.
Fig.4
Gain and efficiency as functions of load
power, typical values.
Fig.5
Load power as a function of drive power,
typical values.
Ruggedness in class-B operation
The BLT50 is capable of withstanding a load mismatch
corresponding to VSWR = 50:1 through all phases at rated
output power, up to a supply voltage of 9 V, f = 470 MHz
and T
s
≤
60
°C,
where T
s
is the temperature at the
soldering point of the collector tab.
April 1991
5
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