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ADP1879-1.0-EVALZ

Description
BOARD EVAL FOR ADP1879-1.0
CategoryDevelopment board/suite/development tools   
File Size2MB,40 Pages
ManufacturerADI
Websitehttps://www.analog.com
Environmental Compliance
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ADP1879-1.0-EVALZ Overview

BOARD EVAL FOR ADP1879-1.0

ADP1879-1.0-EVALZ Parametric

Parameter NameAttribute value
The main purposeDC/DC, step down
Output and type1. Non-isolation
Voltage - Output-
Current - Output-
Voltage - input2.95 V ~ 20 V
Regulator topologystep down
Frequency - Switch1MHz
Board typecompletely filled
What's includedplate
IC/parts usedADP1879
Data
Sheet
FEATURES
Synchronous Buck Controller with
Constant On Time and Valley Current Mode
ADP1878/ADP1879
TYPICAL APPLICATIONS CIRCUIT
V
IN
= 2.95V TO 20V
VIN
C
C
R
C
V
REG
V
OUT
C
C2
Power input voltage range: 2.95 V to 20 V
On-board bias regulator
Minimum output voltage: 0.6 V
0.6 V reference voltage with ±1.0% accuracy
Supports all N-channel MOSFET power stages
Available in 300 kHz, 600 kHz, and 1.0 MHz options
No current sense resistor required
Power saving mode (PSM) for light loads (ADP1879 only)
Resistor programmable current limit
Power good with internal pull-up resistor
Externally programmable soft start
Thermal overload protection
Short-circuit protection
Standalone precision enable input
Integrated bootstrap diode for high-side drive
Starts into a precharged output
Available in a 14-lead LFCSP_WD package
ADP1878/
ADP1879
COMP
EN
FB
GND
VREG
PGOOD
RES
PGND
SS
BST
DRVH
SW
DRVL
C
BST
C
IN
Q1
10kΩ
R
TOP
R
BOT
L
V
OUT
C
OUT
Q2
LOAD
C
VREG2
C
VREG
R
RES
R
PGD
C
SS
V
EXT
Figure 1.
APPLICATIONS
Telecommunications and networking systems
Mid-to-high end servers
Set-top boxes
DSP core power supplies
GENERAL DESCRIPTION
The
ADP1878/ADP1879
are versatile current-mode, synchronous
step-down controllers. They provide superior transient response,
optimal stability, and current-limit protection by using a constant
on time, pseudo fixed frequency with a programmable current-limit,
current control scheme. These devices offer optimum performance
at low duty cycles by using a valley, current-mode control architec-
ture allowing the
ADP1878/ADP1879
to drive all N-channel power
stages to regulate output voltages to as low as 0.6 V.
The
ADP1879
is the power saving mode (PSM) version of the
device and is capable of pulse skipping to maintain output
regulation while achieving improved system efficiency at light
loads (see the ADP1879 Power Saving Mode (PSM) section for
more information).
Available in three frequency options (300 kHz, 600 kHz, and
1.0 MHz) plus the PSM option, the
ADP1878/ADP1879
are well
suited for a wide range of applications that require a single input
power supply range from 2.95 V to 20 V. Low voltage biasing is
supplied via a 5 V internal low dropout regulator (LDO). In
addition, soft start programmability is included to limit input
inrush current from the input supply during startup and to
provide reverse current protection during precharged output
Rev. B
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
conditions. The low-side current sense, current gain scheme and
integration of a boost diode, together with the PSM/forced
pulse-width modulation (PWM) option, reduce the external
device count and improve efficiency.
The
ADP1878/ADP1879
operate over the −40°C to +125°C
junction temperature range and are available in a 14-lead
LFCSP_WD package.
100
95
90
85
80
EFFICIENCY (%)
V
IN
= 5V (PSM)
75
70
65
60
55
50
45
40 V
IN
= 16.5V (PSM)
35
30
25
10
100
V
IN
= 13V (PSM)
T
A
= 25°C
V
OUT
= 1.8V
f
SW
= 300kHz
WÜRTH INDUCTOR:
744325120, L = 1.2µH, DCR = 1.8mΩ
INFINEON FETs:
BSC042N03MS G (UPPER/LOWER)
1k
LOAD CURRENT (mA)
10k
100k
09441-102
V
IN
= 16.5V
V
IN
= 13V
Figure 2.
ADP1878/ADP1879
Efficiency vs. Load Current (V
OUT
= 1.8 V, 300 kHz)
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2011–2012 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
09441-001

ADP1879-1.0-EVALZ Related Products

ADP1879-1.0-EVALZ BSC042N03MSG BSC080N03MSG IRF7811 Si4842DY ADP1878 ADP1878-0.3-EVALZ
Description BOARD EVAL FOR ADP1879-1.0 17 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET 13 A, 30 V, 0.0102 ohm, N-CHANNEL, Si, POWER, MOSFET 17 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET 17 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET 17 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET 17 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET
Number of terminals - 5 5 5 5 5 5
Minimum breakdown voltage - 30 V 30 V 30 V 30 V 30 V 30 V
Processing package description - GREEN, PLASTIC, TDSON-8 GREEN, PLASTIC, TDSON-8 GREEN, PLASTIC, TDSON-8 GREEN, PLASTIC, TDSON-8 GREEN, PLASTIC, TDSON-8 GREEN, PLASTIC, TDSON-8
Lead-free - Yes Yes Yes Yes Yes Yes
EU RoHS regulations - Yes Yes Yes Yes Yes Yes
China RoHS regulations - Yes Yes Yes Yes Yes Yes
state - ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount - Yes Yes Yes Yes Yes Yes
Terminal form - FLAT FLAT FLAT FLAT FLAT FLAT
terminal coating - MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN
Terminal location - DUAL DUAL DUAL DUAL DUAL DUAL
Packaging Materials - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Shell connection - DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
Number of components - 1 1 1 1 1 1
transistor applications - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON SILICON SILICON SILICON
Channel type - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
field effect transistor technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
operating mode - ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT
Transistor type - GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Maximum leakage current - 17 A 13 A 17 A 17 A 17 A 17 A
Rated avalanche energy - 40 mJ 15 mJ 40 mJ 40 mJ 40 mJ 40 mJ
Maximum drain on-resistance - 0.0054 ohm 0.0102 ohm 0.0054 ohm 0.0054 ohm 0.0054 ohm 0.0054 ohm
Maximum leakage current pulse - 372 A 212 A 372 A 372 A 372 A 372 A

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