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BSC042N03MSG

Description
17 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size2MB,40 Pages
ManufacturerADI
Websitehttps://www.analog.com
Download Datasheet Parametric Compare View All

BSC042N03MSG Overview

17 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET

BSC042N03MSG Parametric

Parameter NameAttribute value
Number of terminals5
Minimum breakdown voltage30 V
Processing package descriptionGREEN, PLASTIC, TDSON-8
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formFLAT
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current17 A
Rated avalanche energy40 mJ
Maximum drain on-resistance0.0054 ohm
Maximum leakage current pulse372 A
Data
Sheet
FEATURES
Synchronous Buck Controller with
Constant On Time and Valley Current Mode
ADP1878/ADP1879
TYPICAL APPLICATIONS CIRCUIT
V
IN
= 2.95V TO 20V
VIN
C
C
R
C
V
REG
V
OUT
C
C2
Power input voltage range: 2.95 V to 20 V
On-board bias regulator
Minimum output voltage: 0.6 V
0.6 V reference voltage with ±1.0% accuracy
Supports all N-channel MOSFET power stages
Available in 300 kHz, 600 kHz, and 1.0 MHz options
No current sense resistor required
Power saving mode (PSM) for light loads (ADP1879 only)
Resistor programmable current limit
Power good with internal pull-up resistor
Externally programmable soft start
Thermal overload protection
Short-circuit protection
Standalone precision enable input
Integrated bootstrap diode for high-side drive
Starts into a precharged output
Available in a 14-lead LFCSP_WD package
ADP1878/
ADP1879
COMP
EN
FB
GND
VREG
PGOOD
RES
PGND
SS
BST
DRVH
SW
DRVL
C
BST
C
IN
Q1
10kΩ
R
TOP
R
BOT
L
V
OUT
C
OUT
Q2
LOAD
C
VREG2
C
VREG
R
RES
R
PGD
C
SS
V
EXT
Figure 1.
APPLICATIONS
Telecommunications and networking systems
Mid-to-high end servers
Set-top boxes
DSP core power supplies
GENERAL DESCRIPTION
The
ADP1878/ADP1879
are versatile current-mode, synchronous
step-down controllers. They provide superior transient response,
optimal stability, and current-limit protection by using a constant
on time, pseudo fixed frequency with a programmable current-limit,
current control scheme. These devices offer optimum performance
at low duty cycles by using a valley, current-mode control architec-
ture allowing the
ADP1878/ADP1879
to drive all N-channel power
stages to regulate output voltages to as low as 0.6 V.
The
ADP1879
is the power saving mode (PSM) version of the
device and is capable of pulse skipping to maintain output
regulation while achieving improved system efficiency at light
loads (see the ADP1879 Power Saving Mode (PSM) section for
more information).
Available in three frequency options (300 kHz, 600 kHz, and
1.0 MHz) plus the PSM option, the
ADP1878/ADP1879
are well
suited for a wide range of applications that require a single input
power supply range from 2.95 V to 20 V. Low voltage biasing is
supplied via a 5 V internal low dropout regulator (LDO). In
addition, soft start programmability is included to limit input
inrush current from the input supply during startup and to
provide reverse current protection during precharged output
Rev. B
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
conditions. The low-side current sense, current gain scheme and
integration of a boost diode, together with the PSM/forced
pulse-width modulation (PWM) option, reduce the external
device count and improve efficiency.
The
ADP1878/ADP1879
operate over the −40°C to +125°C
junction temperature range and are available in a 14-lead
LFCSP_WD package.
100
95
90
85
80
EFFICIENCY (%)
V
IN
= 5V (PSM)
75
70
65
60
55
50
45
40 V
IN
= 16.5V (PSM)
35
30
25
10
100
V
IN
= 13V (PSM)
T
A
= 25°C
V
OUT
= 1.8V
f
SW
= 300kHz
WÜRTH INDUCTOR:
744325120, L = 1.2µH, DCR = 1.8mΩ
INFINEON FETs:
BSC042N03MS G (UPPER/LOWER)
1k
LOAD CURRENT (mA)
10k
100k
09441-102
V
IN
= 16.5V
V
IN
= 13V
Figure 2.
ADP1878/ADP1879
Efficiency vs. Load Current (V
OUT
= 1.8 V, 300 kHz)
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2011–2012 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
09441-001

BSC042N03MSG Related Products

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Description 17 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET 13 A, 30 V, 0.0102 ohm, N-CHANNEL, Si, POWER, MOSFET 17 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET 17 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET 17 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET 17 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET BOARD EVAL FOR ADP1879-1.0
Number of terminals 5 5 5 5 5 5 -
Minimum breakdown voltage 30 V 30 V 30 V 30 V 30 V 30 V -
Processing package description GREEN, PLASTIC, TDSON-8 GREEN, PLASTIC, TDSON-8 GREEN, PLASTIC, TDSON-8 GREEN, PLASTIC, TDSON-8 GREEN, PLASTIC, TDSON-8 GREEN, PLASTIC, TDSON-8 -
Lead-free Yes Yes Yes Yes Yes Yes -
EU RoHS regulations Yes Yes Yes Yes Yes Yes -
China RoHS regulations Yes Yes Yes Yes Yes Yes -
state ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE -
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
surface mount Yes Yes Yes Yes Yes Yes -
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT -
terminal coating MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN -
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL -
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN -
Number of components 1 1 1 1 1 1 -
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON -
Channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL -
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
operating mode ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT -
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER -
Maximum leakage current 17 A 13 A 17 A 17 A 17 A 17 A -
Rated avalanche energy 40 mJ 15 mJ 40 mJ 40 mJ 40 mJ 40 mJ -
Maximum drain on-resistance 0.0054 ohm 0.0102 ohm 0.0054 ohm 0.0054 ohm 0.0054 ohm 0.0054 ohm -
Maximum leakage current pulse 372 A 212 A 372 A 372 A 372 A 372 A -
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