BGF106C
Revision History Rev. 3.0, 2011-05-13
Page or Item
4
Subjects (major changes since previous revision)
Features updated
Rev. 3.1, 2013-01-16
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Final Datasheet
2
Rev. 3.1, 2013-01-16
BGF106C
SIM Card Interface Filter and ESD Protection
1
SIM Card Interface Filter and ESD Protection
1.1
Features
•
•
•
•
•
ESD protection circuit and interface filter for SIM cards
ESD protection according to IEC61000-4-2 for
±
15 kV contact discharge on external
IOs
Wafer level package with SnAgCu solder balls
400
μm
solder ball pitch
Pb-free (RoHS compliant) and halogen free package
WLP-8-11-N-3D
1.2
Description
BGF106C is an ESD protection circuit and filtering interface for SIM cards. All external IOs are protected against
ESD pulses of
±
15 kV contact discharge according to IEC61000-4-2. The wafer level package is a green lead-free
and halogen-free package with a size of only 1.2 mm x 1.2 mm and a total height of 0.6 mm
Vcc
RST_int
CLK_int
Data I/O_int
A3
B3
C3
R1, 100Ω
R2, 47Ω
R3, 100Ω
C2
A2
B1
C1
RST_ext
CLK_ext
Data I/O_ext
GND, B2
BGF106_ schematic_app.vsd
Figure 1-1 Schematic Diagram and Package Configuration
Type
BGF106C
Package
WLP-8-11
Marking
6C
Chip
N0727
Final Datasheet
3
Rev. 3.1, 2013-01-16
BGF106C
Characteristics
2
Characteristics
Table 2-1
Parameter
Maximum Ratings
Symbol
Min.
Values
Typ.
–
–
–
–
–
–
Max.
5.5
+85
+150
60
2
15
V
°
°C
mW
kV
kV
0
-40
-65
–
-2
-15
Unit
Note /
Test Condition
–
–
–
Voltage at all pins to GND
Operating temperature range
Storage temperature range
Summed up input power for all pins
V
P
T
OP
T
STG
P
in
T
S
< 70 °C
–
–
Electrostatic discharge according to IEC61000-4-2
Contact discharge at internal pins A3, B3, C3 to
V
ESD
any other pin
Contact discharge at external pins A2, B1, C1,
V
ESD
C2 to GND
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.1
Electrical Characteristics
Table 2-2
Parameter
Electrical Characteristics
1)
Symbol
Min.
Values
Typ.
100
47
1
2
7.8
16.5
Max.
120
56.4
100
1000
–
20
Ω
Ω
nA
nA
V
pF
80
37.6
–
–
6.5
–
Unit
Note /
Test Condition
–
–
Resistors
R
1
,
R
3
Resistor
R
2
Reverse current of ESD protection diodes
Breakdown voltage of ESD diodes
Line capacitance
Capacitance of all lines to GND
1) at
T
A
= 25 °C
R
1,3
R
2
I
R
V
(BR)
C
T
V
=3V
V
=5V
I
(BR)
= 1 mA
V
=0V
Final Datasheet
4
Rev. 3.1, 2013-01-16
ARM Technology
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