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RQ3G150GNTB

Description
MOSFET N-CHANNEL 40V 39A 8HSMT
Categorysemiconductor    Discrete semiconductor   
File Size261KB,5 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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RQ3G150GNTB Overview

MOSFET N-CHANNEL 40V 39A 8HSMT

RQ3G150GNTB Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)40V
Current - Continuous Drain (Id) at 25°C39A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs7.2 milliohms @ 15A, 10V
Vgs (th) (maximum value) when different Id2.5V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)11.6nC @ 4.5V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)1450pF @ 20V
FET function-
Power dissipation (maximum)20W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packaging8-HSMT(3.2x3)
Package/casing8-PowerVDFN
Tape and Packing
Product
Transistor / MOSFET
Package HSMT8
Type TB
1. Components description (Only for reference)
3.3
(8)
(7)
(6)
(5)
0.8
3.3
3.0
1pin mark
(1)
(2)
(3)
(4)
0.2
Unit
mm
1.75±0.1
2. Taping dimensions
Φ1.5
+0.1
-0
4.0±0.1
2.0±0.05
8.0±0.1
0.3±0.05
9.2±0.1
12.0
+0.3
-0.1
5.5±0.05
3.7±0.1
3.7±0.1
Φ1.5 Min.
1.1±0.1
Unit
mm
Note) Feed holes might be cover with the adhesive tape, but nothing will affect for using by that.
3. Tape and packing specification
3-1. Direction of tape winding
1pin on the reel side. The direction shall be one in a reel.
3-2. Cumulative pitch tolerance
The cumulative pitch tolerance of the mold for producing the carrier tape shall be within ±0.2mm
per 10pitches.
3-3. The minimum radius to bend the carrier tape
Carrier tape shall be flexible enough to protect from no component and damage under a minimum
radius of 30mm. However it shall be defined only inside of carrier tape.
3-4. The material of carrier tape
Special carbon paints are coated both sides of polystyrene.
3-5. Failure Rate
Incidence
Continuous missing
Discontinuous missing
0%
Max.0.1%/reel
Remark
 Except
leader and trail portion
www.rohm.com
©2016 ROHM Co., Ltd. All rights reserved
1/4
2016.1 - Rev.A

RQ3G150GNTB Related Products

RQ3G150GNTB RQ3L050GNTB RQ3E075ATTB
Description MOSFET N-CHANNEL 40V 39A 8HSMT MOSFET N-CHANNEL 60V 12A 8HSMT MOSFET P-CHANNEL 30V 18A 8HSMT
FET type N channel - P channel
technology MOSFET (metal oxide) - MOSFET (metal oxide)
Drain-source voltage (Vdss) 40V - 30V
Current - Continuous Drain (Id) at 25°C 39A(Tc) - 18A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 10V - 10V
Rds On (maximum value) when different Id, Vgs 7.2 milliohms @ 15A, 10V - 23 milliohms @ 7.5A, 10V
Vgs (th) (maximum value) when different Id 2.5V @ 1mA - 2.5V @ 1mA
Gate charge (Qg) at different Vgs (maximum value) 11.6nC @ 4.5V - 10.4nC @ 4.5V
Vgs (maximum value) ±20V - ±20V
Input capacitance (Ciss) at different Vds (maximum value) 1450pF @ 20V - 930pF @ 15V
Power dissipation (maximum) 20W(Tc) - 15W(Tc)
Operating temperature -55°C ~ 150°C(TJ) - -55°C ~ 150°C(TJ)
Installation type surface mount - surface mount
Supplier device packaging 8-HSMT(3.2x3) - 8-HSMT(3.2x3)
Package/casing 8-PowerVDFN - 8-PowerVDFN

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