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SRAS890 MNG

Description
DIODE SCHOTTKY 90V 8A TO263AB
Categorysemiconductor    Discrete semiconductor   
File Size193KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SRAS890 MNG Overview

DIODE SCHOTTKY 90V 8A TO263AB

SRAS890 MNG Parametric

Parameter NameAttribute value
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)90V
Current - average rectification (Io)8A
Voltage at different If - Forward (Vf950mV @ 8A
speedFast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current100µA @ 90V
Capacitance at different Vr, F-
Installation typesurface mount
Package/casingTO-263-3, D²Pak (2-lead + tab), TO-263AB
Supplier device packagingTO-263AB(D²PAK)
Operating Temperature - Junction-55°C ~ 150°C
SRAS820 - SRAS8150
Taiwan Semiconductor
CREAT BY ART
8A, 20V - 150V Surface Mount Schottky Barrier Rectifiers
FEATURES
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case:
TO-263AB (D
2
PAK)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Weight:
1.37 g (approximately)
TO-263AB (D PAK)
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 8 A
T
J
=25°C
Maximum reverse current @ rated V
R
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=100°C
T
J
=125°C
dV/dt
R
θJC
T
J
T
STG
- 55 to +125
I
R
5
-
10000
3
- 55 to +150
- 55 to +150
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
0.55
SRAS SRAS SRAS SRAS SRAS SRAS SRAS SRAS
820
20
14
20
830
30
21
30
840
40
28
40
850
50
35
50
8
150
0.70
0.1
-
5
V/μs
°C/W
°C
°C
mA
0.95
860
60
42
60
890
90
63
90
8100 8150
100
70
100
150
105
150
UNIT
V
V
V
A
A
V
Document Number: DS_D1309054
Version: J15
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