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JAN2N5416UA

Description
Small Signal Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon,
CategoryDiscrete semiconductor    The transistor   
File Size320KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JAN2N5416UA Overview

Small Signal Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon,

JAN2N5416UA Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid2078541077
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-XDSO-N4
JESD-609 codee0
Number of components1
Number of terminals4
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusQualified
GuidelineMIL-19500/485H
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)10000 ns
Maximum opening time (tons)1000 ns
2N5415UA – 2N5416UA
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
Compliant
PNP Silicon Low-Power Transistor
Qualified per MIL-PRF-19500/485
DESCRIPTION
This family of 2N5415UA and 2N5416UA epitaxial planar transistors are military qualified up to
a JANS level for high-reliability applications. The UA package is hermetically sealed and
provides a low profile for minimizing board height. These devices are also available in the
long-leaded TO-5, short-leaded TO-39 and low profile U4 packaging.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered 2N5415 through 2N5416 series
JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/485.
(See
part nomenclature
for all available options.)
RoHS compliant
UA Package
Also available in:
TO-5 package
APPLICATIONS / BENEFITS
General purpose transistors for low power applications requiring high frequency switching.
Low package profile
Military and other high-reliability applications
(long-leaded)
2N5415 – 2N5416
TO-39 (TO-205AD)
package
(short-leaded)
2N5415S – 2N5416S
U4 package
(surface mount)
2N5415U4 – 2N5416U4
MAXIMUM RATINGS
@ T
A
= +25
ºC
unless otherwise noted
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating & Storage Junction Temperature Range
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Solder Pad
Total Power Dissipation
@ T
A
= +25 °C
(2)
@ T
SP
= +25 °C
(1)
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
R
ӨJA
R
ӨJSP
P
T
2N5415UA
200
200
6.0
1.0
2N5416UA
300
350
6.0
1.0
Unit
V
V
V
A
°C
o
o
-65 to +200
234
80
0.75
2
C/W
C/W
W
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Notes:
1. Derate linearly 4.29 mW/°C for T
A
> +25°C
2. Derate linearly 12.5 mW/°C for T
SP
> +25 °C
T4-LDS-0305-3, Rev. 1 (7/30/13)
©2013 Microsemi Corporation
Page 1 of 6

JAN2N5416UA Related Products

JAN2N5416UA 2N5416UA JANTX2N5415UA JANS2N5415UA 2N5415UA JANS2N5416UA JANTX2N5416UA JANTXV2N5416UA JAN2N5415UA JANTXV2N5415UA
Description Small Signal Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Small Signal Bipolar Transistor Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Small Signal Bipolar Transistor Small Signal Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Small Signal Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Small Signal Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon,
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible conform to incompatible conform to incompatible incompatible incompatible incompatible
Objectid 2078541077 1343227778 2078571842 2078551732 1343227775 2078551735 2078571852 2078586919 2078541071 2078586913
Reach Compliance Code unknown compliant unknown unknown compliant unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
JESD-609 code e0 e4 e0 e0 e4 e0 e0 e0 e0 e0
Terminal surface TIN LEAD GOLD OVER NICKEL TIN LEAD TIN LEAD GOLD OVER NICKEL TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Shell connection COLLECTOR - COLLECTOR COLLECTOR - COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 1 A 1 A 1 A 1 A - 1 A 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 300 V 300 V 200 V 200 V - 300 V 300 V 300 V 200 V 200 V
Configuration SINGLE SINGLE SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 30 30 30 30 - 30 30 30 30 30
JESD-30 code R-XDSO-N4 R-CDSO-N4 R-XDSO-N4 R-XDSO-N4 - R-XDSO-N4 R-XDSO-N4 R-XDSO-N4 R-XDSO-N4 R-XDSO-N4
Number of components 1 1 1 1 - 1 1 1 1 1
Number of terminals 4 4 4 4 - 4 4 4 4 4
Package body material UNSPECIFIED CERAMIC, METAL-SEALED COFIRED UNSPECIFIED UNSPECIFIED - UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP - PNP PNP PNP PNP PNP
Certification status Qualified - Qualified Qualified - Qualified Qualified Qualified Qualified Qualified
Guideline MIL-19500/485H - MIL-19500/485H MIL-19500/485H - MIL-19500/485H MIL-19500/485H MIL-19500/485H MIL-19500/485H MIL-19500/485H
surface mount YES YES YES YES - YES YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD - NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location DUAL DUAL DUAL DUAL - DUAL DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON - SILICON SILICON SILICON SILICON SILICON
Maximum off time (toff) 10000 ns 10000 ns 10000 ns 10000 ns - 10000 ns 10000 ns 10000 ns 10000 ns 10000 ns
Maximum opening time (tons) 1000 ns 1000 ns 1000 ns 1000 ns - 1000 ns 1000 ns 1000 ns 1000 ns 1000 ns

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