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BTA330X-800BTQ

Description
TRIAC 800V 30A TO220F
Categorysemiconductor    Discrete semiconductor   
File Size217KB,13 Pages
ManufacturerWeEn Semiconductors
Environmental Compliance
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BTA330X-800BTQ Overview

TRIAC 800V 30A TO220F

BTA330X-800BTQ Parametric

Parameter NameAttribute value
Triac typestandard
Voltage - Off state800V
Current - On State (It (RMS)) (Maximum)30A
Voltage - Gate Trigger (Vgt) (Maximum)1.3V
Current - Non-repetitive surge 50, 60Hz (Itsm)270A,297A
Current - Gate Trigger (Igt) (maximum)50mA
Current - Hold (Ih) (maximum)75mA
Configurationsingle
Operating temperature150°C(TJ)
Installation typeThrough hole
Package/casingTO-220-3 fully encapsulated, isolation tab
Supplier device packagingTO-220F
BTA330X-800BT
3Q Hi-Com Triac
12 September 2018
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack"
plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can
occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction
temperature (T
j(max)
= 150 °C) without the aid of a snubber. It is used in applications where "high
junction operating temperature capability" is required.
2. Features and benefits
3Q technology for improved noise immunity
2500 V RMS isolation voltage capability
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High junction operating temperature capability
High voltage capability
High current capability
Isolated mounting base package
Least sensitive gate for highest noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
Applications subject to high temperature
Heating controls
High power motor control
High power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
h
≤ 44 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
800
30
270
297
150
Unit
V
A
A
A
°C
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
junction temperature
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