RN2226 datasheet, PDF - EEWORLD Datasheet

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RN2226: DescriptionSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications; CategoryDiscrete semiconductor The transistor; File Size327KB，7 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN2226 Overview

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2226 Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 10
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	90
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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RN2221~RN2227

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2221,RN2222,RN2223

RN2224,RN2225,RN2226,RN2227

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

High current type (I

C(MAX)

−800mA)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Low V

CE (sat)

Complementary to RN1221~RN1227

Unit: mm

Equivalent Circuit

Bias Resistor Values

Type No.

RN2221

RN2222

RN2223

RN2224

RN2225

RN2226

RN2227

R1 (kΩ)

2.2

4.7

0.47

2.2

R2 (kΩ)

2.2

4.7

JEDEC

EIAJ

TOSHIBA

Weight: 0.13g

―

2-4E1A

Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

RN2221~2227

RN2221~2224

Emitter-base voltage

RN2225, 2226

RN2227

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2221~2227

stg

EBO

Symbol

CBO

CEO

Rating

−50

−10

−5

−6

−800

300

150

−55~150

°C

Unit

2001-06-07

RN2226 Related Products

	RN2226	RN2221	RN2222	RN2223	RN2224	RN2225	RN2227
Description	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Maker	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Contacts	3	3	3	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 10	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 21	BUILT-IN BIAS RESISTOR RATIO IS 4.5
Maximum collector current (IC)	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	90	60	65	70	90	90	90
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
JESD-609 code	e0	e0	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz

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