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SICR5650

Description
DIODE SCHOTTKY SILICON CARBIDE S
Categorysemiconductor    Discrete semiconductor   
File Size376KB,6 Pages
ManufacturerSMC
Websitehttp://www.smc-diodes.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

SICR5650 Overview

DIODE SCHOTTKY SILICON CARBIDE S

SICR5650 Parametric

Parameter NameAttribute value
Diode typeSilicon carbide Schottky
Voltage - DC Reverse (Vr) (Maximum)650V
Current - average rectification (Io)5A
Voltage at different If - Forward (Vf1.7V @ 5A
speedNo recovery time > 500mA (Io)
Reverse recovery time (trr)0ns
Current at different Vr - Reverse leakage current60µA @ 650V
Capacitance at different Vr, F-
Installation typeThrough hole
Package/casingTO-220-2
Supplier device packagingTO-220AC
Operating Temperature - Junction-55°C ~ 175°C
SICR5650
SICRB5650
SICRD5650
SICRF5650
Technical Data
Data Sheet N1870, Draft 1
SICR5650
/ SICRB5650 / SICRD5650 / SICRF5650
650V SIC POWER SCHOTTKY RECTIFIER
Features
175°C T
J
operation
Ultra-low switching loss
Switching speeds independent of operating
temperature
Low total conduction losses
High forward surge current capability
High package isolation voltage
Guard ring for enhanced ruggedness and long term
reliability
Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional electrical and life testing can be performed
upon request
Description
SICR5650/ SICRB5650/ SICRD5650/ SICRF5650 are all
single SiC Schottky rectifiers packaged in TO-220AC,
D2PAK, DPAK and ITO-220ACcase. The device is a high
voltage Schottky rectifier that has very low total
conduction losses and very stable switching
characteristics over temperature extremes. The
SICR5650/ SICRB5650/ SICRD5650/ SICRF5650 are ideal
for energy sensitive, high frequency applications in
challenging environments.
Applications
Alternative energy inverters
Power Factor Correction (PFC)
Free-Wheeling diodes
Switching supply output rectification
Reverse polarity protection
SICR5650
SICRB5650
SICRD5650
SICRF5650
TO-220AC
D
2
PAK
DPAK
ITO-220AC
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
50% duty cycle @Tc=105°C,
rectangular wave form
8.3ms, Half Sine pulse
Max.
650
5
60
Units
V
A
A
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

SICR5650 Related Products

SICR5650 SICRD5650TR SICRB5650TR SICRF5650
Description DIODE SCHOTTKY SILICON CARBIDE S DIODE SCHOTTKY SILICON CARBIDE S DIODE SCHOTTKY SILICON CARBIDE S DIODE SCHOTTKY SILICON CARBIDE S
Diode type Silicon carbide Schottky Silicon carbide Schottky Silicon carbide Schottky Silicon carbide Schottky
Voltage - DC Reverse (Vr) (Maximum) 650V 650V 650V 650V
Current - average rectification (Io) 5A 5A 5A 5A
Voltage at different If - Forward (Vf 1.7V @ 5A 1.7V @ 5A 1.7V @ 5A 1.7V @ 5A
speed No recovery time > 500mA (Io) No recovery time > 500mA (Io) No recovery time > 500mA (Io) No recovery time > 500mA (Io)
Reverse recovery time (trr) 0ns 0ns 0ns 0ns
Current at different Vr - Reverse leakage current 60µA @ 650V 60µA @ 650V 60µA @ 650V 60µA @ 650V
Installation type Through hole surface mount surface mount Through hole
Package/casing TO-220-2 TO-252-3, DPak (2 leads + tab), SC-63 TO-263-3, D²Pak (2-lead + tab), TO-263AB TO-220-2 fully encapsulated, isolation tab
Supplier device packaging TO-220AC DPAK D2PAK ITO-220AC
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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