ES2A - ES2J
Taiwan Semiconductor
2A, 50V - 600V Surface Mount Super Fast Rectifier
FEATURES
Glass passivated junction chip
Ideal for automated placement
Low profile package
Super fast recovery time for high efficiency
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
●
●
●
●
●
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
VALUE
2
50 - 600
50
150
Single Die
UNIT
A
V
A
°C
DO-214AA (SMB)
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
MECHANICAL DATA
● Case: DO-214AA (SMB)
● Molding compound meets UL 94V-0 flammability rating
● Packing code with suffix "G" means green compound
(halogen-free)
● Part no. with suffix “H” means AEC-Q101 qualified
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.09 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3
ms single half sine-wave
superimposed on rated load per
diode
Junction temperature
Storage temperature
SYMBOL ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J UNIT
ES2A ES2B ES2C ES2D ES2F ES2G ES2H ES2J
V
RRM
50
100
150
200
300
400
500
600
V
V
R(RMS)
30
70
105
140
210
280
350
420
V
V
DC
50
100
150
200
300
400
500
600
V
I
F(AV)
2
A
I
FSM
T
J
T
STG
50
- 55 to +150
- 55 to +150
A
°C
°C
1
Version:K1701
ES2A - ES2J
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction to Lead Thermal Resistance
Junction to Ambient Thermal Resistance
SYMBOL
R
ӨJL
R
ӨJA
LIMIT
20
75
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
ES2A
ES2B
ES2C
Forward voltage per diode
(1)
CONDITIONS
SYMBOL
TYP
-
-
-
-
MAX
UNIT
V
V
V
V
V
V
V
V
µA
µA
pF
pF
pF
pF
pF
pF
pF
pF
ns
0.95
ES2D
ES2F
ES2G
ES2H
ES2J
T
J
= 25°C
T
J
= 125°C
I
F
= 2A,T
J
= 25°C
V
F
-
-
-
-
-
-
1.30
1.70
10
350
-
-
-
-
-
-
-
-
Reverse current @ rated V
R
per diode
(2)
I
R
ES2A
ES2B
ES2C
Junction capacitance
ES2D
ES2F
ES2G
ES2H
ES2J
Reverse recovery time
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
I
F
=0.5A ,I
R
=1.0A
I
RR
=0.25A
t
rr
-
1 MHz, V
R
=4.0V
C
J
20
25
35
2
Version:K1701
ES2A - ES2J
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
Fig2. Typical Junction Capacitance
3
AVERAGE FORWARD CURRENT (A)
60
50
CAPACITANCE (pF)
f=1.0MHz
Vsig=50mVp-p
2
40
30
20
10
0
ES2F-J
ES2A-D
1
RESISTER OR
INDUCTIVE LOAD
0
80
90
100
110
120
130
140
150
0.1
1
10
100
LEAD TEMPERATURE (
°
C)
REVERSE VOLTAGE (V)
Fig3. Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
1000
100
10
Fig4. Typical Forward Characteristics
100
T
J
=125°C
10
T
J
=75°C
Pulse Width=300μs
1% Duty Cycle
1
10
0.1
UF1DLW
ES2F-2G
T
J
=125°C
ES2A-2D
T
J
=25°C
(A)
Pulse width
ES2H-2J
1
1
0.01
0.1
T
J
=25°C
0.001
0.1
0.4
0.3
0.4
0.6
0.5
0.8
0.6
1
0.7
1.2
0.8
1.4
0.01
0
20
40
60
80
100
120
140
0.9
1
1.6
1.1
1.8
1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
4
Version:K1701
ES2A - ES2J
Taiwan Semiconductor
Fig5. Maximum Non-repetitive Forward Surge Current
60
50
40
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
8.3ms Single Half Sine Wave
PEAK FORWARD SURGE CURRENT (A)
100
Fig6. Reverse Recovery Time Characteristic And Test Circuit Diagram
5
Version:K1701
Embedded System
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