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PMP4501QASZ

Description
TRANS 2NPN DFN1010B-6
Categorysemiconductor    Discrete semiconductor   
File Size8MB,220 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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PMP4501QASZ Overview

TRANS 2NPN DFN1010B-6

PMP4501QASZ Parametric

Parameter NameAttribute value
Transistor type2 NPN (double)
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)45V
Vce saturation value (maximum value) when different Ib,Ic-
Current - collector cutoff (maximum)-
DC current gain (hFE) at different Ic, Vce (minimum value)-
Power - Max350mW
Frequency - Transition-
Operating temperature-
Installation typesurface mount
Package/casing6-XFDFN Exposed Pad
Supplier device packagingDFN1010B-6
Selection guide
2018.
Discretes, Logic and MOSFETs

PMP4501QASZ Related Products

PMP4501QASZ PUSB3FA0X PMP5501QASZ
Description TRANS 2NPN DFN1010B-6 TVS DIODE 4.6V DFN2510A-10 TRANS 2PNP SOT1216/DFN1010B-6
Installation type surface mount surface mount surface mount
Package/casing 6-XFDFN Exposed Pad 10-XFDFN 6-XFDFN Exposed Pad
Supplier device packaging DFN1010B-6 DFN2510A-10 DFN1010B-6
Transistor type 2 NPN (double) - 2 NPN (double)
Current - Collector (Ic) (Maximum) 100mA - 100mA
Voltage - collector-emitter breakdown (maximum) 45V - 45V
Power - Max 350mW - 350mW
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