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TLP291(YH-TP,SE

Description
OPTOISOLATOR 3.75KV TRANS 4-SO
CategoryLED optoelectronic/LED   
File Size529KB,10 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

TLP291(YH-TP,SE Overview

OPTOISOLATOR 3.75KV TRANS 4-SO

TLP291(YH-TP,SE Parametric

Parameter NameAttribute value
Number of channels1
Voltage - Isolation3750Vrms
Current transfer ratio (minimum value)75% @ 5mA
Current transfer ratio (maximum)150% @ 5mA
Open/close time (typ.)3µs,3µs
Rise/Fall Time (Typical)2µs,3µs
input typeDC
Output typetransistor
Voltage - Output (maximum)80V
Current - Output/Channel50mA
Voltage - Forward (Vf) (Typical)1.25V
Current - DC Forward (If)50mA
Vce saturation value (maximum value)300mV
Operating temperature-55°C ~ 110°C
Installation typesurface mount
Package/casing4-SOIC (0.179", 4.55mm wide)
Supplier device packaging4-SO
TLP291(SE
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
TLP291(SE
Power Supplies
Programmable Controllers
Hybrid ICs
TLP291(SE consists of photo transistor optically coupled to a gallium
arsenide infrared emitting diode.
TLP291(SE is housed in the SO4 package, very small and thin coupler.
Since TLP291(SE is guaranteed wide operating temperature (Ta=-55 to
110 ˚C) and high isolation voltage (3750Vrms), it’s suitable for high-density
surface mounting applications such as small switching power supplies and
programmable controllers.
Collector-Emitter Voltage
Current Transfer Ratio
Rank GB
Isolation Voltage
UL recognized
cUL approved
SEMKO conformity
BSI conformity
: 80 V (min)
: 50% (min)
: 100% (min)
: 3750 Vrms (min)
: UL1577, File No. E67349
: CSA Component Acceptance Service No.5A,
File No. E67349
: EN 60065: 2002,
EN 60950-1: 2001, EN 60335-1: 2002,
: BS EN 60065: 2002,
BS EN 60950-1: 2006
1
2
TLP291
4
3
TOSHIBA
11-3C1
Weight: 0.05 g (typ.)
Unit: mm
Operation temperature: -55 to 110 ˚C
Pin Configuration
VDE conformity: EN 60747-5-5
Construction Mechanical Rating
Creepage distance: 5.0mm(min)
Clearance: 5.0mm(min)
Insulation thickness: 0.4mm(min)
1:ANODE
2:CATHODE
3:EMITTER
4:COLLECTOR
1
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