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DSA7102S0L

Description
TRANS PNP 80V 1A MINIP3
CategoryDiscrete semiconductor    The transistor   
File Size667KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DSA7102S0L Overview

TRANS PNP 80V 1A MINIP3

DSA7102S0L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionHALOGEN FREE AND ROHS COMPLIANT, MINIP3-F2-B, TO-243, SC-62, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)170
JEDEC-95 codeTO-243AA
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
DSA7102
Silicon PNP epitaxial planar type
For low frequency amplification
Complementary to DSC7102
Features
Low collector-emitter saturation voltage V
CE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: 4D
Packaging
DSA7102×0L Embossed type (Thermo-compression sealing): 1 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
*1
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
opr
T
stg
Rating
–80
–80
–5
–1
–1.5
1
150
–40 to +85
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
°C
1: Base
2: Collector
3: Emitter
Panasonic
JEITA
Code
MiniP3-F2-B
SC-62
TO-243
Note) *1: Printed circuit board: Copper foil area of 1 cm
2
or more, and the board thickness
of 1.7 mm for the collector portion
Absolute maximum rating without heat sink for P
C
is 0.5 W
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1 *2
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= –10
mA,
I
E
= 0
I
C
= –1 mA, I
B
= 0
I
E
= –10
mA,
I
C
= 0
V
CB
= –40 V, I
E
= 0
V
CE
= –2 V, I
C
= –100 mA
V
CE
= –2 V, I
C
= –500 mA
I
C
= –500 mA, I
B
= –50 mA
I
C
= –500 mA, I
B
= –50 mA
V
CE
= –10 V, I
C
= –50 mA
V
CB
= –10 V, I
E
= 0, f = 1 MHz
120
60
– 0.2
– 0.95
150
12
30
– 0.3
–1.2
Min
–80
–80
–5
– 0.1
340
Typ
Max
Unit
V
V
V
mA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*
2: Rank classification
Code
Rank
h
FE1
Marking Symbol
R
R
120 to 240
4DR
S
S
170 to 340
4DS
Publication date: February 2014
Ver. EED
1

DSA7102S0L Related Products

DSA7102S0L DSA7102R0L
Description TRANS PNP 80V 1A MINIP3 TRANS PNP 80V 1A MINIP3
Is it Rohs certified? conform to conform to
Maker Panasonic Panasonic
package instruction HALOGEN FREE AND ROHS COMPLIANT, MINIP3-F2-B, TO-243, SC-62, 3 PIN HALOGEN FREE AND ROHS COMPLIANT, MINIP3-F2-B, TO-243, SC-62, 3 PIN
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 1 A 1 A
Collector-emitter maximum voltage 80 V 80 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 170 120
JEDEC-95 code TO-243AA TO-243AA
JESD-30 code R-PSSO-F3 R-PSSO-F3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 1 W 1 W
surface mount YES YES
Terminal form FLAT FLAT
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz

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