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BUK9Y22-100E,115

Description
MOSFET N-CH 100V 49A LFPAK
CategoryDiscrete semiconductor    The transistor   
File Size756KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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BUK9Y22-100E,115 Overview

MOSFET N-CH 100V 49A LFPAK

BUK9Y22-100E,115 Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeSOIC
package instructionSMALL OUTLINE, R-PSSO-G4
Contacts4
Manufacturer packaging codeSOT669
Reach Compliance Codenot_compliant
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)80.8 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)49 A
Maximum drain-source on-resistance0.022 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-235
JESD-30 codeR-PSSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)197 A
GuidelineAEC-Q101; IEC-60134
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
BUK9Y22-100E
7 November 2016
N-channel 100 V, 22 mΩ logic level MOSFET in LFPAK56
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with V
GS(th)
rating of greater than 0.5 V at 175 °C
3. Applications
12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
25 °C ≤ T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 5 V; I
D
= 15 A; T
j
= 25 °C;
Fig. 11
Min
-
-
-
Typ
-
-
-
Max
100
49
147
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
17.4
22
Dynamic characteristics
Q
GD
I
D
= 15 A; V
DS
= 80 V; V
GS
= 5 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
-
13.3
-
nC

BUK9Y22-100E,115 Related Products

BUK9Y22-100E,115 934067037115
Description MOSFET N-CH 100V 49A LFPAK MOSFET N-CH 100V 49A LFPAK
Maker Nexperia Nexperia
package instruction SMALL OUTLINE, R-PSSO-G4 SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code not_compliant compliant
Other features AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 80.8 mJ 80.8 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V
Maximum drain current (ID) 49 A 49 A
Maximum drain-source on-resistance 0.022 Ω 0.022 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code MO-235 MO-235
JESD-30 code R-PSSO-G4 R-PSSO-G4
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 197 A 197 A
Guideline AEC-Q101; IEC-60134 AEC-Q101; IEC-60134
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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