SGP20N60
SGW20N60
Fast IGBT in NPT-technology
•
75% lower
E
off
compared to previous generation
combined with low conduction losses
•
Short circuit withstand time – 10
µs
•
Designed for:
- Motor controls
- Inverter
•
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
C
G
E
PG-TO-220-3-1
PG-TO-247-3
•
Qualified according to JEDEC
1
for target applications
•
Pb-free lead plating; RoHS compliant
•
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
SGP20N60
SGW20N60
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150°C
Gate-emitter voltage
Avalanche energy, single pulse
I
C
= 20 A,
V
CC
= 50 V,
R
GE
= 25
Ω,
start at
T
j
= 25°C
Short circuit withstand time
2
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150°C
Power dissipation
T
C
= 25°C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
T
j
,
T
stg
T
s
-55...+150
260
°C
P
tot
179
W
t
SC
10
µs
V
GE
E
AS
±20
115
V
mJ
I
Cpuls
-
Symbol
V
CE
I
C
40
20
80
80
Value
600
Unit
V
A
V
CE
600V
600V
I
C
20A
20A
V
CE(sat)
2.4V
2.4V
T
j
150°C
150°C
Marking
G20N60
G20N60
Package
PG-TO-220-3-1
PG-TO-247-3
1
2
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.4
Nov 09
SGP20N60
SGW20N60
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
thJA
PG-TO-220-3-1
PG-TO-247-3-21
62
40
R
thJC
0.7
K/W
Symbol
Conditions
Max. Value
Unit
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V,
I
C
= 50 0µA
V
CE(sat)
V
G E
= 15V,
I
C
= 20A
T
j
= 25° C
T
j
= 15 0° C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 70 0µA,
V
C E
=V
G E
V
C E
= 600V ,V
G E
= 0V
T
j
= 25° C
T
j
= 15 0° C
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
Symbol
Conditions
Value
min.
600
1.7
-
3
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
2
2.4
4
-
-
-
14
1100
107
63
100
7
13
200
max.
-
2.4
2.9
5
Unit
V
µA
40
2500
100
-
1320
128
76
130
-
-
-
A
nC
nH
nA
S
pF
I
GES
g
fs
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
= 0V ,V
G E
= 2 0V
V
C E
= 20V,
I
C
= 20A
V
C E
= 25V,
V
G E
= 0V,
f=
1 M Hz
V
C C
= 4 80V,
I
C
= 20A
V
G E
= 1 5V
PG -TO -220-3-1
PG -TO -247-3-21
V
G E
= 1 5V,t
S C
≤10µs
V
C C
≤
600V,
T
j
≤
150° C
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.4
Nov 09
SGP20N60
SGW20N60
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 25° C,
V
C C
= 4 00V,
I
C
= 20A,
V
G E
= 0/ 1 5V ,
R
G
= 1 6Ω ,
L
σ
1 )
= 18 0n H ,
C
σ
1 )
= 90 0p F
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
36
30
225
54
0.44
0.33
0.77
46
36
270
65
0.53
0.43
0.96
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=150
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 15 0° C
V
C C
= 4 00V,
I
C
= 20A,
V
G E
= 0/ 1 5V ,
R
G
= 1 6Ω ,
1)
L
σ
= 18 0n H ,
C
σ
1 )
= 90 0p F
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
36
30
250
63
0.67
0.49
1.12
46
36
300
76
0.81
0.64
1.45
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
3
Rev. 2.4
Nov 09
SGP20N60
SGW20N60
110A
100A
90A
100A
I
c
t
p
=4
µ
s
15
µ
s
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
80A
70A
60A
50A
40A
30A
20A
10A
0A
10Hz
T
C
=110°C
T
C
=80°C
10A
50
µ
s
200
µ
s
1A
1ms
I
c
0.1A
1V
10V
100V
DC
100Hz
1kHz
10kHz
100kHz
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
150°C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 16Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤
150°C)
200W
180W
160W
50A
40A
120W
100W
80W
60W
40W
20W
0W
25°C
50°C
75°C
100°C
125°C
I
C
,
COLLECTOR CURRENT
POWER DISSIPATION
140W
30A
20A
P
tot
,
10A
0A
25°C
50°C
75°C
100°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
≤
150°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≤
15V,
T
j
≤
150°C)
4
Rev. 2.4
Nov 09
SGP20N60
SGW20N60
60A
60A
50A
50A
V
GE
=20V
15V
13V
11V
9V
7V
5V
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
40A
40A
V
GE
=20V
15V
13V
11V
9V
7V
5V
30A
30A
20A
20A
10A
10A
0A
0V
1V
2V
3V
4V
5V
0A
0V
1V
2V
3V
4V
5V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T
j
= 150°C)
60A
50A
40A
30A
20A
10A
0A
0V
T
j
=+25°C
-55°C
+150°C
V
CE(sat)
,
COLLECTOR
-
EMITTER SATURATION VOLTAGE
70A
4.0V
3.5V
I
C
= 40A
I
C
,
COLLECTOR CURRENT
3.0V
2.5V
I
C
= 20A
2.0V
1.5V
2V
4V
6V
8V
10V
1.0V
-50°C
0°C
50°C
100°C
150°C
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V
CE
= 10V)
T
j
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
GE
= 15V)
5
Rev. 2.4
Nov 09
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