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FR303TA

Description
DIODE GEN PURP 200V 3A DO201AD
Categorysemiconductor    Discrete semiconductor   
File Size323KB,4 Pages
ManufacturerSMC
Websitehttp://www.smc-diodes.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

FR303TA Overview

DIODE GEN PURP 200V 3A DO201AD

FR303TA Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)200V
Current - average rectification (Io)3A
Voltage at different If - Forward (Vf1.3V @ 3A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)150ns
Current at different Vr - Reverse leakage current5µA @ 200V
Capacitance at different Vr, F60pF @ 4V,1MHz
Installation typeThrough hole
Package/casingDO-201AD, axial
Supplier device packagingDO-201AD
Operating Temperature - Junction-65°C ~ 150°C
FR301-FR307
Technical Data
Data Sheet N0448, Rev. A
FAST RECOVERY RECTIFIERS
Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed: 260 C/10
seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
FR301 THRU FR307
DO-201AD
Circuit Diagram
Mechanical Data
Case: DO-201AD molded plastic body
Terminals: Plated axial leads, solderable per MIL-
STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.04 ounce, 1.10 grams
Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum DC blocking voltage
Maximum RMS voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at @T
A
=75°C
Peak forward surge current 8.3ms single half sine-
wave superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
At Rated DC Blocking Voltage
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
DC
V
RMS
I
(AV)
I
FSM
V
F
I
RM
t
rr
C
J
R
θJA
T
J
T
STG
150
60
20
FR
301
50
35
FR
302
5
100
3
70
FR
303
1
200
7
140
FR
304
2
400
1
280
3.0
200
1.3
5.0
100
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
FR
305
4
600
2
420
FR
306
6
800
4
560
FR
307
8
1000
5
700
Units
1
V
1
V
A
A
V
µA
250
500
ns
pF
°C/W
°C
°C
Maximum reverse recovery time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to
Ambient (Note 3)
Operating junction temperature range
Operating storage temperature range
-65 to +150
-65 to +150
Note: 1. Reverse recovery condition IF=0.5A, IR=1.0A, Irr=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length, P.C.B. mounted
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

FR303TA Related Products

FR303TA FR301TA FR302TA FR304TA FR305TA FR306TA FR307TA
Description DIODE GEN PURP 200V 3A DO201AD DIODE GEN PURP 50V 3A DO201AD DIODE GEN PURP 100V 3A DO201AD DIODE GEN PURP 400V 3A DO201AD DIODE GEN PURP 600V 3A DO201AD DIODE GEN PURP 800V 3A DO201AD DIODE GEN PURP 1KV 3A DO201AD
Diode type standard standard standard standard standard standard standard
Voltage - DC Reverse (Vr) (Maximum) 200V 50V 100V 400V 600V 800V 1000V
Current - average rectification (Io) 3A 3A 3A 3A 3A 3A 3A
Voltage at different If - Forward (Vf 1.3V @ 3A 1.3V @ 3A 1.3V @ 3A 1.3V @ 3A 1.3V @ 3A 1.3V @ 3A 1.3V @ 3A
speed Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr) 150ns 150ns 150ns 150ns 250ns 500ns 500ns
Current at different Vr - Reverse leakage current 5µA @ 200V 5µA @ 50V 5µA @ 100V 5µA @ 400V 5µA @ 600V 5µA @ 800V 5µA @ 1000V
Capacitance at different Vr, F 60pF @ 4V,1MHz 60pF @ 4V,1MHz 60pF @ 4V,1MHz 60pF @ 4V,1MHz 60pF @ 4V,1MHz 60pF @ 4V,1MHz 60pF @ 4V,1MHz
Installation type Through hole Through hole Through hole Through hole Through hole Through hole Through hole
Package/casing DO-201AD, axial DO-201AD, axial DO-201AD, axial DO-201AD, axial DO-201AD, axial DO-201AD, axial DO-201AD, axial
Supplier device packaging DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C
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