FR307TA datasheet, PDF - EEWORLD Datasheet

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FR307TA: DescriptionDIODE GEN PURP 1KV 3A DO201AD; Categorysemiconductor Discrete semiconductor; File Size323KB，4 Pages; ManufacturerSMC; Websitehttp://www.smc-diodes.com/; Environmental Compliance

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FR307TA Overview

DIODE GEN PURP 1KV 3A DO201AD

FR307TA Parametric

Parameter Name	Attribute value
Diode type	standard
Voltage - DC Reverse (Vr) (Maximum)	1000V
Current - average rectification (Io)	3A
Voltage at different If - Forward (Vf	1.3V @ 3A
speed	Fast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)	500ns
Current at different Vr - Reverse leakage current	5µA @ 1000V
Capacitance at different Vr, F	60pF @ 4V，1MHz
Installation type	Through hole
Package/casing	DO-201AD, axial
Supplier device packaging	DO-201AD
Operating Temperature - Junction	-65°C ~ 150°C

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FR301-FR307

Technical Data

Data Sheet N0448, Rev. A

FAST RECOVERY RECTIFIERS

Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes

Features



The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Fast switching for high efficiency

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed: 260 C/10

seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension

This is a Pb − Free Device

All SMC parts are traceable to the wafer lot

Additional testing can be offered upon request

FR301 THRU FR307

DO-201AD

Circuit Diagram



Mechanical Data

Case: DO-201AD molded plastic body

Terminals: Plated axial leads, solderable per MIL-

STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: 0.04 ounce, 1.10 grams

Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%.

Characteristic

Maximum repetitive peak reverse voltage

Maximum DC blocking voltage

Maximum RMS voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at @T

=75°C

Peak forward surge current 8.3ms single half sine-

wave superimposed on rated load (JEDEC Method)

Maximum instantaneous forward voltage at 3.0A

Maximum DC reverse current

At Rated DC Blocking Voltage

= 25°C

= 100°C

Symbol

RRM

RMS

(AV)

FSM

θJA

STG

150

301

302

100

303

200

140

304

400

280

3.0

200

1.3

5.0

100

Maximum Ratings and Electrical Characteristics

=25°C unless otherwise specified

305

600

420

306

800

560

307

1000

700

Units

µA

250

500

°C/W

°C

Maximum reverse recovery time (Note 1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance Junction to

Ambient (Note 3)

Operating junction temperature range

Operating storage temperature range

-65 to +150

Note: 1. Reverse recovery condition IF=0.5A, IR=1.0A, Irr=0.25A

2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3. Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length, P.C.B. mounted



China - Germany - Korea - Singapore - United States



http://www.smc-diodes.com - sales@ smc-diodes.com



FR301-FR307

Technical Data

Data Sheet N0448, Rev. A

DISCLAIMER:

1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product

characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales

department for the latest version of the datasheet(s).

2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,

medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by

means of users’ fail-safe precautions or other arrangement .

3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or

any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd

assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,

products or circuits described in the datasheets.

4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any

secondary damage resulting from use at a value exceeding the absolute maximum rating.

5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics

(Nanjing) Co., Ltd.

6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC

- Sangdest Microelectronics (Nanjing) Co., Ltd.

7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will

hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third

party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and

regulations..



China - Germany - Korea - Singapore - United States



http://www.smc-diodes.com - sales@ smc-diodes.com



FR307TA Related Products

	FR307TA	FR301TA	FR302TA	FR303TA	FR304TA	FR305TA	FR306TA
Description	DIODE GEN PURP 1KV 3A DO201AD	DIODE GEN PURP 50V 3A DO201AD	DIODE GEN PURP 100V 3A DO201AD	DIODE GEN PURP 200V 3A DO201AD	DIODE GEN PURP 400V 3A DO201AD	DIODE GEN PURP 600V 3A DO201AD	DIODE GEN PURP 800V 3A DO201AD
Diode type	standard	standard	standard	standard	standard	standard	standard
Voltage - DC Reverse (Vr) (Maximum)	1000V	50V	100V	200V	400V	600V	800V
Current - average rectification (Io)	3A	3A	3A	3A	3A	3A	3A
Voltage at different If - Forward (Vf	1.3V @ 3A	1.3V @ 3A	1.3V @ 3A	1.3V @ 3A	1.3V @ 3A	1.3V @ 3A	1.3V @ 3A
speed	Fast recovery = < 500 ns, > 200mA (Io)	Fast recovery = < 500 ns, > 200mA (Io)	Fast recovery = < 500 ns, > 200mA (Io)	Fast recovery = < 500 ns, > 200mA (Io)	Fast recovery = < 500 ns, > 200mA (Io)	Fast recovery = < 500 ns, > 200mA (Io)	Fast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)	500ns	150ns	150ns	150ns	150ns	250ns	500ns
Current at different Vr - Reverse leakage current	5µA @ 1000V	5µA @ 50V	5µA @ 100V	5µA @ 200V	5µA @ 400V	5µA @ 600V	5µA @ 800V
Capacitance at different Vr, F	60pF @ 4V，1MHz	60pF @ 4V，1MHz	60pF @ 4V，1MHz	60pF @ 4V，1MHz	60pF @ 4V，1MHz	60pF @ 4V，1MHz	60pF @ 4V，1MHz
Installation type	Through hole	Through hole	Through hole	Through hole	Through hole	Through hole	Through hole
Package/casing	DO-201AD, axial	DO-201AD, axial	DO-201AD, axial	DO-201AD, axial	DO-201AD, axial	DO-201AD, axial	DO-201AD, axial
Supplier device packaging	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD
Operating Temperature - Junction	-65°C ~ 150°C	-65°C ~ 150°C	-65°C ~ 150°C	-65°C ~ 150°C	-65°C ~ 150°C	-65°C ~ 150°C	-65°C ~ 150°C

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