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IRD3CH101DB6

Description
DIODE GEN PURP 1.2KV 200A DIE
Categorysemiconductor    Discrete semiconductor   
File Size217KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

IRD3CH101DB6 Overview

DIODE GEN PURP 1.2KV 200A DIE

IRD3CH101DB6 Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)1200V
Current - average rectification (Io)200A
Voltage at different If - Forward (Vf2.7V @ 200A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)360ns
Current at different Vr - Reverse leakage current3.6µA @ 1200V
Capacitance at different Vr, F-
Installation typesurface mount
Package/casingMold
Supplier device packagingMold
Operating Temperature - Junction-40°C ~ 175°C
IRD3CH101DB6
V
RRM
= 1200V
I
F (Nominal)
= 200A
T
J (max)
= 150°C
V
F
typ = 2.1V
Ultra Fast-Soft Recovery Diode
 
C
Applications
 Industrial
Motor Drive
 Uninterruptible
Power Supply
 Welding
 Solar
Inverter
C
Cathode
A
Anode
Features
Low V
F
Ultra Fast-Soft Recovery
Chip Type
IRD3CH101DB6
V
RRM
1200V
I
F(Nominal)
200A
Benefits
High efficiency in a wide range of applications
Performance optimized for IGBT anti parallel diode
Die Size
10.06 x 10.07mm
2
Package Type
Wafer
Mechanical Parameters
Die Size
Anode Pad Size
Area Total / Active
Thickness
Wafer Size
Minimum Street Width
Flat Position
Maximum-Possible Chips per Wafer
Passivation Frontside
Front Metal-Anode Pad
Backside Metal
Die Bond
Reject Ink Dot Size
Recommended Storage Environment
10.06 x 10.07
mm
2
8.62 x 8.64
101.3 / 80.1
330
µm
150
mm
100
µm
0
Degree
130 pcs
Silicon Nitride
Al-1%Si (3µm)
Cr /Ni /Ag
Electrically conductive epoxy or solder
0.25mm min (black, center)
Store in original container, in dry Nitrogen,
<6 months at an ambient temperature of 23°C
1
www.irf.com
© 2014 International Rectifier
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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