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MT41K256M16LY-093:N TR

Description
IC DRAM 4G PARALLEL 96FBGA
Categorystorage   
File Size3MB,217 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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MT41K256M16LY-093:N TR Overview

IC DRAM 4G PARALLEL 96FBGA

MT41K256M16LY-093:N TR Parametric

Parameter NameAttribute value
memory typeVolatile
memory formatDRAM
technologySDRAM - DDR3L
storage4Gb (256M x 16)
Clock frequency1067MHz
Write cycle time - words, pages-
interview time20ns
memory interfacein parallel
Voltage - Power1.283 V ~ 1.45 V
Operating temperature0°C ~ 95°C(TC)
Installation typesurface mount
Package/casing96-TFBGA
Supplier device packaging96-FBGA(7.5x13.5)
4Gb: x4, x8, x16 DDR3L SDRAM
Description
DDR3L SDRAM
MT41K1G4 – 128 Meg x 4 x 8 banks
MT41K512M8 – 64 Meg x 8 x 8 banks
MT41K256M16 – 32 Meg x 16 x 8 banks
Description
DDR3L SDRAM (1.35V) is a low voltage version of the
DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM
(Die Rev :E) data sheet specifications when running in
1.5V compatible mode.
Self refresh temperature (SRT)
Automatic self refresh (ASR)
Write leveling
Multipurpose register
Output driver calibration
Features
• V
DD
= V
DDQ
= 1.35V (1.283–1.45V)
• Backward compatible to V
DD
= V
DDQ
= 1.5V ±0.075V
– Supports DDR3L devices to be backward com-
patible in 1.5V applications
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
• Programmable CAS (READ) latency (CL)
• Programmable posted CAS additive latency (AL)
• Programmable CAS (WRITE) latency (CWL)
• Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• T
C
of 105°C
– 64ms, 8192-cycle refresh up to 85°C
– 32ms, 8192-cycle refresh at >85°C to 95°C
– 16ms, 8192-cycle refresh at >95°C to 105°C
Options
• Configuration
– 1 Gig x 4
– 512 Meg x 8
– 256 Meg x 16
• FBGA package (Pb-free) – x4, x8
– 78-ball (9mm x 10.5mm) Rev. E
– 78-ball (7.5mm x 10.6mm) Rev. N
– 78-ball (8mm x 10.5mm) Rev. P
• FBGA package (Pb-free) – x16
– 96-ball (9mm x 14mm) Rev. E
– 96-ball (7.5mm x 13.5mm) Rev. N
– 96-ball (8mm x 14mm) Rev. P
• Timing – cycle time
– 938ps @ CL = 14 (DDR3-2133)
– 1.07ns @ CL = 13 (DDR3-1866)
– 1.25ns @ CL = 11 (DDR3-1600)
• Operating temperature
– Commercial (0°C T
C
+95°C)
– Industrial (–40°C T
C
+95°C)
– Automotive (–40°C T
C
+105°C)
• Revision
Marking
1G4
512M8
256M16
RH
RG
DA
HA
LY
TW
-093
-107
-125
None
IT
AT
:E/:N/:P
Table 1: Key Timing Parameters
Speed Grade
-093
1, 2
-107
1
-125
Notes:
Data Rate (MT/s)
2133
1866
1600
Target
t
RCD-
t
RP-CL
14-14-14
13-13-13
11-11-11
t
RCD
(ns)
t
RP
(ns)
CL (ns)
13.09
13.91
13.75
13.09
13.91
13.75
13.09
13.91
13.75
1. Backward compatible to 1600, CL = 11 (-125).
2. Backward compatible to 1866, CL = 13 (-107).
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. Q 12/17 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

MT41K256M16LY-093:N TR Related Products

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Description IC DRAM 4G PARALLEL 96FBGA RESISTOR, THIN FILM, 0.5 W, 5 %, 100 ppm, 2700 ohm, SURFACE MOUNT, 1010, CHIP, ROHS COMPLIANT IC DRAM 4G PARALLEL 96FBGA IC DRAM 4G PARALLEL 78FBGA IC DRAM 4G PARALLEL 78FBGA IC DRAM 4G PARALLEL 96FBGA IC DRAM 4G PARALLEL 96FBGA IC DRAM 4G PARALLEL 78FBGA IC DRAM 4G PARALLEL 78FBGA IC DRAM 4G PARALLEL 78FBGA
technology SDRAM - DDR3L THIN FILM CMOS SDRAM - DDR3L SDRAM - DDR3L SDRAM - DDR3L SDRAM - DDR3L SDRAM - DDR3L SDRAM - DDR3L SDRAM - DDR3L
memory type Volatile - - Volatile Volatile Volatile Volatile Volatile Volatile Volatile
memory format DRAM - - DRAM DRAM DRAM DRAM DRAM DRAM DRAM
storage 4Gb (256M x 16) - - 4Gb (512M x 8) 4Gb (512M x 8) 4Gb (256M x 16) 4Gb (256M x 16) 4Gb (512M x 8) 4Gb (512M x 8) 4Gb (512M x 8)
Clock frequency 1067MHz - - 1067MHz 933MHz 933MHz 1067MHz 1067MHz 1067MHz 933MHz
interview time 20ns - - 20ns 20ns 20ns 20ns 20ns 20ns 20ns
memory interface in parallel - - in parallel in parallel in parallel in parallel in parallel in parallel in parallel
Voltage - Power 1.283 V ~ 1.45 V - - 1.283 V ~ 1.45 V 1.283 V ~ 1.45 V 1.283 V ~ 1.45 V 1.283 V ~ 1.45 V 1.283 V ~ 1.45 V 1.283 V ~ 1.45 V 1.283 V ~ 1.45 V
Operating temperature 0°C ~ 95°C(TC) - - 0°C ~ 95°C(TC) -40°C ~ 95°C(TC) 0°C ~ 95°C(TC) -40°C ~ 95°C(TC) -40°C ~ 95°C(TC) 0°C ~ 95°C(TC) 0°C ~ 95°C(TC)
Installation type surface mount - - surface mount surface mount surface mount surface mount surface mount surface mount surface mount
Package/casing 96-TFBGA - - 78-TFBGA 78-TFBGA 96-TFBGA 96-TFBGA 78-TFBGA 78-TFBGA 78-TFBGA
Supplier device packaging 96-FBGA(7.5x13.5) - - 78-FBGA(8x10.5) 78-FBGA(8x10.5) 96-FBGA(7.5x13.5) 96-FBGA(8x14) 78-FBGA(8x10.5) 78-FBGA(7.5x10.6) 78-FBGA(7.5x10.6)

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