MT41K512M8DA-093 IT:P TR datasheet, PDF

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MT41K512M8DA-093 IT:P TR: DescriptionIC DRAM 4G PARALLEL 78FBGA; Categorystorage; File Size3MB，217 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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MT41K512M8DA-093 IT:P TR Overview

IC DRAM 4G PARALLEL 78FBGA

MT41K512M8DA-093 IT:P TR Parametric

Parameter Name	Attribute value
memory type	Volatile
memory format	DRAM
technology	SDRAM - DDR3L
storage	4Gb （512M x 8）
Clock frequency	1067MHz
Write cycle time - words, pages	-
interview time	20ns
memory interface	in parallel
Voltage - Power	1.283 V ~ 1.45 V
Operating temperature	-40°C ~ 95°C（TC）
Installation type	surface mount
Package/casing	78-TFBGA
Supplier device packaging	78-FBGA（8x10.5）

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4Gb: x4, x8, x16 DDR3L SDRAM

Description

DDR3L SDRAM

MT41K1G4 – 128 Meg x 4 x 8 banks

MT41K512M8 – 64 Meg x 8 x 8 banks

MT41K256M16 – 32 Meg x 16 x 8 banks

Description

DDR3L SDRAM (1.35V) is a low voltage version of the

DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM

(Die Rev :E) data sheet specifications when running in

1.5V compatible mode.

•

Self refresh temperature (SRT)

Automatic self refresh (ASR)

Write leveling

Multipurpose register

Output driver calibration

Features

• V

= V

DDQ

= 1.35V (1.283–1.45V)

• Backward compatible to V

= V

DDQ

= 1.5V ±0.075V

– Supports DDR3L devices to be backward com-

patible in 1.5V applications

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

• Differential clock inputs (CK, CK#)

• 8 internal banks

• Nominal and dynamic on-die termination (ODT)

for data, strobe, and mask signals

• Programmable CAS (READ) latency (CL)

• Programmable posted CAS additive latency (AL)

• Programmable CAS (WRITE) latency (CWL)

• Fixed burst length (BL) of 8 and burst chop (BC) of 4

(via the mode register set [MRS])

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

• T

of 105°C

– 64ms, 8192-cycle refresh up to 85°C

– 32ms, 8192-cycle refresh at >85°C to 95°C

– 16ms, 8192-cycle refresh at >95°C to 105°C

Options

• Configuration

– 1 Gig x 4

– 512 Meg x 8

– 256 Meg x 16

• FBGA package (Pb-free) – x4, x8

– 78-ball (9mm x 10.5mm) Rev. E

– 78-ball (7.5mm x 10.6mm) Rev. N

– 78-ball (8mm x 10.5mm) Rev. P

• FBGA package (Pb-free) – x16

– 96-ball (9mm x 14mm) Rev. E

– 96-ball (7.5mm x 13.5mm) Rev. N

– 96-ball (8mm x 14mm) Rev. P

• Timing – cycle time

– 938ps @ CL = 14 (DDR3-2133)

– 1.07ns @ CL = 13 (DDR3-1866)

– 1.25ns @ CL = 11 (DDR3-1600)

• Operating temperature

– Commercial (0°C T

+95°C)

– Industrial (–40°C T

+95°C)

– Automotive (–40°C T

+105°C)

• Revision

Marking

1G4

512M8

256M16

-093

-107

-125

None

:E/:N/:P

Table 1: Key Timing Parameters

Speed Grade

-093

1, 2

-107

-125

Notes:

Data Rate (MT/s)

2133

1866

1600

Target

RCD-

RP-CL

14-14-14

13-13-13

11-11-11

RCD

(ns)

CL (ns)

13.09

13.91

13.75

13.09

13.91

13.75

13.09

13.91

13.75

1. Backward compatible to 1600, CL = 11 (-125).

2. Backward compatible to 1866, CL = 13 (-107).

09005aef85af8fa8

4Gb_DDR3L.pdf - Rev. Q 12/17 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

4Gb: x4, x8, x16 DDR3L SDRAM

Description

Contents

State Diagram ................................................................................................................................................ 11

Functional Description ................................................................................................................................... 12

Industrial Temperature ............................................................................................................................... 12

Automotive Temperature ............................................................................................................................ 12

General Notes ............................................................................................................................................ 13

Functional Block Diagrams ............................................................................................................................. 14

Ball Assignments and Descriptions ................................................................................................................. 16

Package Dimensions ....................................................................................................................................... 22

Electrical Specifications .................................................................................................................................. 28

Absolute Ratings ......................................................................................................................................... 28

Input/Output Capacitance .......................................................................................................................... 29

Thermal Characteristics .................................................................................................................................. 30

Electrical Specifications – I

Specifications and Conditions ............................................................................ 32

Electrical Characteristics – Operating I

Specifications .................................................................................. 43

Electrical Specifications – DC and AC .............................................................................................................. 48

DC Operating Conditions ........................................................................................................................... 48

Input Operating Conditions ........................................................................................................................ 49

DDR3L 1.35V AC Overshoot/Undershoot Specification ................................................................................ 53

DDR3L 1.35V Slew Rate Definitions for Single-Ended Input Signals .............................................................. 56

DDR3L 1.35V Slew Rate Definitions for Differential Input Signals ................................................................. 58

ODT Characteristics ....................................................................................................................................... 59

1.35V ODT Resistors ................................................................................................................................... 60

ODT Sensitivity .......................................................................................................................................... 61

ODT Timing Definitions ............................................................................................................................. 61

Output Driver Impedance ............................................................................................................................... 65

34 Ohm Output Driver Impedance .............................................................................................................. 66

DDR3L 34 Ohm Driver ................................................................................................................................ 67

DDR3L 34 Ohm Output Driver Sensitivity .................................................................................................... 68

DDR3L Alternative 40 Ohm Driver ............................................................................................................... 69

DDR3L 40 Ohm Output Driver Sensitivity .................................................................................................... 69

Output Characteristics and Operating Conditions ............................................................................................ 71

Reference Output Load ............................................................................................................................... 74

Slew Rate Definitions for Single-Ended Output Signals ................................................................................. 74

Slew Rate Definitions for Differential Output Signals .................................................................................... 76

Speed Bin Tables ............................................................................................................................................ 77

Electrical Characteristics and AC Operating Conditions ................................................................................... 82

Command and Address Setup, Hold, and Derating .......................................................................................... 102

Data Setup, Hold, and Derating ...................................................................................................................... 109

Commands – Truth Tables ............................................................................................................................. 117

Commands ................................................................................................................................................... 120

DESELECT ................................................................................................................................................ 120

NO OPERATION ........................................................................................................................................ 120

ZQ CALIBRATION LONG ........................................................................................................................... 120

ZQ CALIBRATION SHORT .......................................................................................................................... 120

ACTIVATE ................................................................................................................................................. 120

READ ........................................................................................................................................................ 120

WRITE ...................................................................................................................................................... 121

PRECHARGE ............................................................................................................................................. 122

REFRESH .................................................................................................................................................. 122

SELF REFRESH .......................................................................................................................................... 123

09005aef85af8fa8

4Gb_DDR3L.pdf - Rev. Q 12/17 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

4Gb: x4, x8, x16 DDR3L SDRAM

Description

DLL Disable Mode ..................................................................................................................................... 124

Input Clock Frequency Change ...................................................................................................................... 128

Write Leveling ............................................................................................................................................... 130

Write Leveling Procedure ........................................................................................................................... 132

Write Leveling Mode Exit Procedure ........................................................................................................... 134

Initialization ................................................................................................................................................. 135

Voltage Initialization / Change ....................................................................................................................... 137

Voltage Switching ............................................................................................................................... 138

Mode Registers .............................................................................................................................................. 139

Mode Register 0 (MR0) ................................................................................................................................... 140

Burst Length ............................................................................................................................................. 140

Burst Type ................................................................................................................................................. 141

DLL RESET ................................................................................................................................................ 142

Write Recovery .......................................................................................................................................... 143

Precharge Power-Down (Precharge PD) ...................................................................................................... 143

CAS Latency (CL) ....................................................................................................................................... 143

Mode Register 1 (MR1) ................................................................................................................................... 145

DLL Enable/DLL Disable ........................................................................................................................... 145

Output Drive Strength ............................................................................................................................... 146

OUTPUT ENABLE/DISABLE ...................................................................................................................... 146

TDQS Enable ............................................................................................................................................. 146

On-Die Termination .................................................................................................................................. 147

WRITE LEVELING ..................................................................................................................................... 147

POSTED CAS ADDITIVE Latency ................................................................................................................ 147

Mode Register 2 (MR2) ................................................................................................................................... 148

CAS Write Latency (CWL) ........................................................................................................................... 149

AUTO SELF REFRESH (ASR) ....................................................................................................................... 149

SELF REFRESH TEMPERATURE (SRT) ........................................................................................................ 149

SRT vs. ASR ............................................................................................................................................... 150

DYNAMIC ODT ......................................................................................................................................... 150

Mode Register 3 (MR3) ................................................................................................................................... 150

MULTIPURPOSE REGISTER (MPR) ............................................................................................................ 151

MPR Functional Description ...................................................................................................................... 152

MPR Register Address Definitions and Bursting Order ................................................................................. 153

MPR Read Predefined Pattern .................................................................................................................... 158

MODE REGISTER SET (MRS) Command ........................................................................................................ 158

ZQ CALIBRATION Operation ......................................................................................................................... 159

ACTIVATE Operation ..................................................................................................................................... 160

READ Operation ............................................................................................................................................ 162

WRITE Operation .......................................................................................................................................... 173

DQ Input Timing ....................................................................................................................................... 181

PRECHARGE Operation ................................................................................................................................. 183

SELF REFRESH Operation .............................................................................................................................. 183

Extended Temperature Usage ........................................................................................................................ 185

Power-Down Mode ........................................................................................................................................ 186

RESET Operation ........................................................................................................................................... 194

On-Die Termination (ODT) ............................................................................................................................ 196

Functional Representation of ODT ............................................................................................................. 196

Nominal ODT ............................................................................................................................................ 196

Dynamic ODT ............................................................................................................................................... 198

Dynamic ODT Special Use Case ................................................................................................................. 198

Functional Description .............................................................................................................................. 198

09005aef85af8fa8

4Gb_DDR3L.pdf - Rev. Q 12/17 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

MT41K512M8DA-093 IT:P TR Related Products

	MT41K512M8DA-093 IT:P TR	P-1010K2701JGTF	MT41K256M16TW-093:P	MT41K512M8DA-093:P	MT41K512M8DA-107 IT:P	MT41K256M16LY-093:N TR	MT41K256M16LY-107:N TR	MT41K256M16TW-093 IT:P TR	MT41K512M8RG-093:N TR	MT41K512M8RG-107:N TR
Description	IC DRAM 4G PARALLEL 78FBGA	RESISTOR, THIN FILM, 0.5 W, 5 %, 100 ppm, 2700 ohm, SURFACE MOUNT, 1010, CHIP, ROHS COMPLIANT	IC DRAM 4G PARALLEL 96FBGA	IC DRAM 4G PARALLEL 78FBGA	IC DRAM 4G PARALLEL 78FBGA	IC DRAM 4G PARALLEL 96FBGA	IC DRAM 4G PARALLEL 96FBGA	IC DRAM 4G PARALLEL 96FBGA	IC DRAM 4G PARALLEL 78FBGA	IC DRAM 4G PARALLEL 78FBGA
technology	SDRAM - DDR3L	THIN FILM	CMOS	SDRAM - DDR3L	SDRAM - DDR3L	SDRAM - DDR3L	SDRAM - DDR3L	SDRAM - DDR3L	SDRAM - DDR3L	SDRAM - DDR3L
memory type	Volatile	-	-	Volatile	Volatile	Volatile	Volatile	Volatile	Volatile	Volatile
memory format	DRAM	-	-	DRAM	DRAM	DRAM	DRAM	DRAM	DRAM	DRAM
storage	4Gb （512M x 8）	-	-	4Gb （512M x 8）	4Gb （512M x 8）	4Gb （256M x 16）	4Gb （256M x 16）	4Gb （256M x 16）	4Gb （512M x 8）	4Gb （512M x 8）
Clock frequency	1067MHz	-	-	1067MHz	933MHz	1067MHz	933MHz	1067MHz	1067MHz	933MHz
interview time	20ns	-	-	20ns	20ns	20ns	20ns	20ns	20ns	20ns
memory interface	in parallel	-	-	in parallel	in parallel	in parallel	in parallel	in parallel	in parallel	in parallel
Voltage - Power	1.283 V ~ 1.45 V	-	-	1.283 V ~ 1.45 V	1.283 V ~ 1.45 V	1.283 V ~ 1.45 V	1.283 V ~ 1.45 V	1.283 V ~ 1.45 V	1.283 V ~ 1.45 V	1.283 V ~ 1.45 V
Operating temperature	-40°C ~ 95°C（TC）	-	-	0°C ~ 95°C（TC）	-40°C ~ 95°C（TC）	0°C ~ 95°C（TC）	0°C ~ 95°C（TC）	-40°C ~ 95°C（TC）	0°C ~ 95°C（TC）	0°C ~ 95°C（TC）
Installation type	surface mount	-	-	surface mount	surface mount	surface mount	surface mount	surface mount	surface mount	surface mount
Package/casing	78-TFBGA	-	-	78-TFBGA	78-TFBGA	96-TFBGA	96-TFBGA	96-TFBGA	78-TFBGA	78-TFBGA
Supplier device packaging	78-FBGA（8x10.5）	-	-	78-FBGA（8x10.5）	78-FBGA（8x10.5）	96-FBGA（7.5x13.5）	96-FBGA（7.5x13.5）	96-FBGA（8x14）	78-FBGA（7.5x10.6）	78-FBGA（7.5x10.6）

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