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GP2D010A065C

Description
DIODE SCHOTTKY 650V 30A TO252
Categorysemiconductor    Discrete semiconductor   
File Size537KB,3 Pages
ManufacturerGlobal Communications
Environmental Compliance
Download Datasheet Parametric View All

GP2D010A065C Overview

DIODE SCHOTTKY 650V 30A TO252

GP2D010A065C Parametric

Parameter NameAttribute value
Diode typeSilicon carbide Schottky
Voltage - DC Reverse (Vr) (Maximum)650V
Current - average rectification (Io)30A(DC)
Voltage at different If - Forward (Vf1.65V @ 10A
speedNo recovery time > 500mA (Io)
Current at different Vr - Reverse leakage current100µA @ 650V
Capacitance at different Vr, F527pF @ 1V,1MHz
Installation typesurface mount
Package/casingTO-252-3, DPak (2 leads + tab), SC-63
Supplier device packagingTO-252,(D-Pak)
Operating Temperature - Junction-55°C ~ 175°C
GP2D010A065C
650V SiC Schottky Diode
Amp+
TM
Features
High surge current capable
Zero reverse recovery current
High bandwidth
Fast, temperature-independent switching
Amp+
TM
Benefits
Unipolar rectifier
VDC
Q
C
I
F
650 V
23 nC
10 A
Amp+
TM
Applications
Motor drives
Zero switching loss
Higher efficiency
Smaller heat sink
Parallel devices with thermal stability
Part #
GP2D010A065C
Switch mode power supplies
Power factor correction
Package
TO-252-2L
(DPAK)
Marking
2D010A065
Maximum Rating
Symbol
Conditions
T
C
=25 °C, T
j
=175 °C
Value
30
16
10
80
50
200
27
10
650
50
102
-55…175
260
1
Unit
Continuous forward current
Surge non-repetitive forward current
sine halfwave
Non-repetitive peak forward current
i
2
t
value
Repetitive peak reverse voltage
Diode
dv/dt
ruggedness
Power dissipation
Operating & storage temperature
Soldering temperature
Mounting torque
I
F
T
C
=125 °C, T
j
=175 °C
T
C
=150 °C, T
j
=175 °C
T
C
=25 °C, t
p
=8.3 ms
T
C
=150 °C, t
p
=8.3 ms
T
C
=25 °C, t
p
=10
ms
T
C
=25 °C, t
p
=8.3 ms
T
C
=150 °C, t
p
=8.3 ms
T
j
=25 °C
Turn-on slew rate, repetitive
A
I
F,SM
I
F,max
i
2
dt
V
RRM
dv/dt
P
tot
T
J
, T
storage
T
solder
A
2
s
V
V/ns
W
°C
°C
N-m
T
C
=25 °C
Continuous
Wave soldering leads
M3 Screw
Electrical Characteristics,
at T
j
=25 °C, unless otherwise specified
Static Characteristics
DC blocking voltage
Diode forward voltage
Reverse current
Symbol
V
DC
V
F
I
R
Conditions
I
R
=0.1mA
I
F
=10A, T
j
=25
o
C
I
F
=10A, T
j
=175 C
V
R
=650V, T
j
=25 C
V
R
=650V, T
j
=175 C
o
o
o
min.
650
-
-
-
-
Values
typ.
-
1.45
1.65
9.0
170
max.
-
1.65
2.00
100
1000
Unit
V
m
A
8/27/2015
Rev 2
www.gptechgroup.com
p.1

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