BGA6130
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
Rev. 2 — 12 February 2014
Product data sheet
1. General description
The MMIC is a one-stage amplifier, offered in a low-cost leadless surface-mount
package. At 3.6 V it delivers 29.5 dBm output power at 3 dB gain compression with
efficiency higher than 55 %. Its power saving features include simple quiescent current
adjustment, which allows class-AB operation and logic-level shutdown control to reduce
the supply current to 4
A.
2. Features and benefits
400 MHz to 2700 MHz frequency operating range
Integrated active biasing
External matching allows broad application optimization of the electrical performance
Efficiencies higher than 55 %
3.6 V single supply operation
Power-down
Excellent robustness:
All pins ESD protected (HBM 6 kV; CDM 2 kV)
Withstands mismatch of VSWR 50 : 1 through all phases
Withstands electrical over-stress peaks of 4.5 V on the supply voltage
3. Applications
In this data sheet two Industrial, Scientific and Medical (ISM) applications are described,
namely ISM at 434 MHz and ISM at 915 MHz. The BGA6130 is also suited for a range of
other applications:
Broadband CPE / MoCA
WLAN / ISM / RFID
Wireless Sensor Network (WSN)
Industrial applications
Satellite Master Antenna TV (SMATV)
NXP Semiconductors
BGA6130
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
4. Quick reference data
Table 1.
Quick reference data
3.3 V
V
SUP
3.9 V;
40
C
T
case
+85
C; P
i
<
20 dBm; R3 = 3900
(tolerance 10 %); input and output impedances
matched to 50
(see
Section 14);
pin ENABLE = HIGH; unless otherwise specified.
Symbol Parameter
V
SUP
I
CC(tot)
supply voltage
total supply current
1 k
R3
5 k
1 k
R3
5 k; pin ENABLE = LOW
T
case
f
f
G
p
P
L(1dB)
P
L(3dB)
f
G
p
P
L(1dB)
P
L(3dB)
[1]
[2]
[3]
Conditions
[1]
[2]
[2]
[2]
[3]
Min Typ
3.3
50
30
-
3.6
70
-
4
Max
3.9
90
250
6
+85
Unit
V
mA
mA
A
C
case temperature
frequency
frequency
power gain
output power at 1 dB gain compression
output power at 3 dB gain compression
efficiency
frequency
power gain
output power at 1 dB gain compression
output power at 3 dB gain compression
efficiency
902 MHz
f
928 MHz
902 MHz
f
928 MHz
902 MHz
f
928 MHz
902 MHz
f
928 MHz; at P
L(3dB)
433 MHz
f
435 MHz
433 MHz
f
435 MHz
433 MHz
f
435 MHz
433 MHz
f
435 MHz; at P
L(3dB)
40
+25
400 -
433 434
14
25
-
-
17
28
56
2700 MHz
435
20
-
-
928
17
-
-
-
MHz
dB
dBm
dBm
%
MHz
dB
dBm
dBm
%
Measured at ISM-434 MHz (see
Section 14)
29.5 -
Measured at ISM-915 MHz (see
Section 14)
902 915
11
26
-
-
14
29
30
60
Supply voltage on pins RF_OUT and V
CC
.
Current through pins RF_OUT and V
CC
.
T
case
is the temperature at the soldering point of the exposed die pad.
5. Design support
Table 2.
Available design support
Download from the BGA6130 product page on
http://www.nxp.com.
Support item
Device models for AWR Microwave Office
SPICE model
S-parameters
Noise parameters
Customer evaluation kit
Gerber files
Solder pattern
[1]
See
http://www.nxp.com/models.html.
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Available
[1]
[1]
[1]
[1]
Remarks
Based on Mextram device model.
Based on Mextram device model.
Based on Mextram device model.
Based on Gummel-Poon device model.
Device models for Agilent EEsof EDA ADS planned
no
planned
yes
yes
yes
yes
yes
Device models for ANSYS Ansoft designer no
See
Section 6
and
Section 14.
Gerber files of boards provided with the customer evaluation kit.
BGA6130
Product data sheet
Rev. 2 — 12 February 2014
2 of 27
NXP Semiconductors
BGA6130
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
6. Ordering information
Table 3.
Ordering information
Package
Name
BGA6130
OM7828/BGA6130/KIT
[1]
Type number
Description
Version
HVSON8
-
plastic thermal enhanced very thin small outline package; no leads; SOT908-3
8 terminals; body 3
3
0.85 mm
Customer evaluation kit for BGA6130
[1]
-
The customer evaluation kit contains the following:
a) Fully populated and matched RF evaluation board for ISM 434
b) Fully populated and matched RF evaluation board for ISM 915
c) Unpopulated Printed-Circuit Board (PCB)
d) Two SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
e) BGA6130 samples
7. Functional diagram
Fig 1.
Functional diagram
BGA6130
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 12 February 2014
3 of 27
NXP Semiconductors
BGA6130
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
8. Pinning information
8.1 Pinning
Fig 2.
Pin configuration
8.2 Pin description
Table 4.
Symbol
n.c.
RF_OUT
V
CC
ENABLE
RF_IN
ICQ_ADJ
GND
[1]
[2]
[3]
[4]
Pin description
Pin
1, 4
2, 3
5
6
7
8
exposed die pad
Description
not connected
[1]
RF output and supply to the amplifier
[2]
bias supply voltage
[3]
enable
RF input
[2]
quiescent collector current adjustment by an external resistor
ground
[4]
This pin can be connected to ground.
This pin requires an external DC-blocking capacitor.
RF decoupled.
The exposed die pad of the SOT908-3 also functions as heatsink for the power amplifier.
9. Functional description
9.1 Supply current adjustment
The supply current can be adjusted by changing the value of biasing resistor R3 which
connects pin ICQ_ADJ (pin 8) to ground (see
Figure 1).
BGA6130
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 12 February 2014
4 of 27
NXP Semiconductors
BGA6130
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier
V
SUP
= 3.6 V; T
amb
= 25
C.
Fig 3.
Supply current I
CC(tot)
as function of biasing resistor R3; typical values
9.2 Enable control
The BGA6130 can be powered down using enable pin 6 (ENABLE). In case this control
function is not needed the enable pin can be connected to the bias supply voltage pin 5
(V
CC
). The current through the enable pin 6 should never exceed 20 mA as this might
damage the ESD protection circuitry. This can be avoided either by preventing the voltage
on this pin to exceed the supply voltage (V
SUP
) or by adding a series resistor.
Table 5.
Enable truth table
See
Table 8.
Logic level on pin ENABLE (pin 6)
LOW
HIGH
Status BGA6130
powered down
powered on
BGA6130
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 12 February 2014
5 of 27
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